Ion Beam Modification of Materials

Content: 
Front Matter, Page iii
Copyright, Page iv
Editorial, Pages v-vi, Jim Williams, Rob Elliman, Mark Ridgway
Committees, Pages vii-viii
Disordering and defect production in silicon by keV ion irradiation studied by molecular dynamics, Pages 1-8, M.J. Caturla, T. Diaz de la Rubia, George H. Gilmer
Systematic study of the ion beam mixing of oxide markers into alumina, Pages 9-16, Elizabeth A. Cooper, Harriet Kung, Michael Nastasi
Metastable alloys synthesised by ion mixing and thermodynamic and kinetic modelling, Pages 17-22, B.X. Liu, Z.J. Zhang, O. Jin, F. Pan
α-Emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals, Pages 23-27, J. De Wachter, S. Blässer, H. Hofsäss, S. Jahn, M. Lindroos, R. Moons, H. Pattyn, M. Restle, A. Vantomme, U. Wahl, P. Van Duppen, the ISOLDE Collaboration, G. Langouche
Atomic mixing induced in metallic bilayers by high electronic excitations, Pages 28-33, R. Leguay, A. Dunlop, F. Dunstetter, N. Lorenzelli, A. Braslau, F. Bridou, J. Corno, B. Pardo, J. Chevallier, C. Colliex, A. Menelle, J.L. Rouvière
Characterization of Si(100) sputtered with low energy argon, Pages 34-37, L.J. Huang, W.M. Lau, I.V. Mitchell, H.T. Tang, W.N. Lennard
Radiation damage features on mica and L-valine probed by scanning force microscopy, Pages 38-42, D.D.N. Barlo Daya, A. Hallén, J. Eriksson, J. Kopniczky, R. Papaléo, C.T. Reimann, P. Håkansson, B.U.R. Sundqvist, A. Brunelle, S. Della-Negra, Y. Le Beyec
Defect production by MeV cluster impacts, Pages 43-46, M. Döbeli, F. Ames, R.M. Ender, M. Suter, H.A. Synal, D. Vetterli
Model for the electronic stopping of channeled ions in silicon around the stopping power maximum, Pages 47-50, A. Simionescu, G. Hobler, S. Bogen, L. Frey, H. Ryssel
Electronic stopping power of 〈100〉 axial-channelled He ions in Si crystals, Pages 51-54, J.H.R. dos Santos, P.L. Grande, H. Boudinov, M. Behar, R. Stoll, Chr. Klatt, S. Kalbitzer
Sputtering of Cu thin films on Ru(0001) by Ne+ ion bombardment, Pages 55-59, Y.G. Shen, D.J. O'Connor, R.J. MacDonald
Valence band electronic redistribution in ion-beam-mixed Pd–Ag alloys, Pages 60-64, K.H. Chae, Y.S. Lee, S.M. Jung, Y. Jeon, M. Croft, C.N. Whang
Influence of nuclear energy deposition density on the ion-beam mixing of metallic bilayers, Pages 65-67, L. Thomé, J. Jagielski
Ion beam modification of metal–polymer interfaces for improved adhesion, Pages 68-73, Boris A. Ratchev, Gary S. Was, John H. Booske
C60 film growth and the interaction of fullerenes with bare and H terminated Si surfaces, studied by molecular dynamics, Pages 74-79, Keith Beardmore, Roger Smith
Novel beam effect: mass transport due to the lateral component of the ion momentum, Pages 80-83, S. Roorda, L. Cliche, M. Chicoine, R.A. Masut
ECR plasma-assisted deposition of Al2O3 and dispersion-strengthened AlOx, Pages 84-89, J.C. Barbour, D.M. Follstaedt, S.M. Myers
High pressure phases produced by low energy ion implantation with reference to cubic boron nitride, Pages 90-95, D.R. McKenzie, W.D. McFall, H. Smith, B. Higgins, R.W. Boswell, A. Durandet, B.W. James, I.S. Falconer
Ions as a useful tool for carbon film deposition and modification, Pages 96-105, J. Ullmann, P. Heger, K. Pinkert, K. Baba
Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition, Pages 106-109, K. Baba, R. Hatada, R. Emmerich, B. Enders, G.K. Wolf
Ion beam assisted deposition of ZrO2 thin films, Pages 110-115, K. Neubeck, R. Nitsche, H. Hahn, L. Alberts, G.K. Wolf, M. Friz
Internal stresses in nickel films prepared by ion beam and vapor deposition, Pages 116-119, Naoto Kuratani, Yasuo Murakami, Osamu Imai, Akinori Ebe, Satoshi Nishiyama, Kiyoshi Ogata
Synthesis of (Ti, Al) N films by ion beam assisted deposition, Pages 120-125, Y. Setsuhara, T. Suzuki, Y. Makino, S. Miyake, T. Sakata, H. Mori
Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy, Pages 126-132, Gang He, Harry A. Atwater
Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy, Pages 133-136, Tsutomu Iida, Kentaro Harada, Shinji Kimura, Takayuki Shima, Hiroshi Katsumata, Yunosuke Makita, Hajime Shibata, Naoto Kobayashi, Shin-ichiro Uekusa, Tokue Matsumori, Kazuhiro Kudo
Silicon carbide and oxide deposition using low energy (5–100 eV) beams of C+, O+, and CO+ ions, Pages 137-141, B.C. Kim, J.R. Hahn, H. Kang
On the mechanism of crystal growth orientation of ion beam assisted deposited thin films, Pages 142-146, W. Ensinger
Ion beam assisted deposition in the synthesis and fracture of metal–ceramic microlaminates, Pages 147-152, G.S. Was, C.E. Kalnas, H. Ji, J.W. Jones
Characterization of cubic boron nitride films grown by mass separated ion beam deposition, Pages 153-158, H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, M. Kuhr, J. Zweck, R. Fischer
Surface treatment by low energy metal ion irradiation, Pages 159-164, T. Weber, J. Verhoeven, F.W. Saris, T. Osipowicz, W.D. Münz
Surface modifications by gas cluster ion beams, Pages 165-169, I. Yamada, J. Matsuo, Z. Insepov, M. Akizuki
Retention of nitrogen implanted into metals, Pages 170-173, Y. Miyagawa, S. Nakao, K. Saitoh, M. Ikeyama, S. Tanemura, S. Miyagawa
Ne+, Ar+ and Xe+ ion bombardment induced and suppressed topography on Si, Pages 174-178, V. Vishnyakov, G. Carter
Volatile products and endpoint detection in reactive ion etching of III–V compounds with a broad beam ECR source, Pages 179-182, D.L. Melville, J. Budinavicius, D.A. Thompson, J.G. Simmons
Point defects in MeV ion-implanted silicon studied by deep level transient spectroscopy, Pages 183-190, B.G. Svensson, C. Jagadish, A. Hallén, J. Lalita
Implant damage and transient enhanced diffusion in Si, Pages 191-197, D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, T.E. Haynes, J.M. Poate
Role of defects during amorphization and relaxation processes in Si, Pages 198-205, T. Motooka, Y. Hiroyama, R. Suzuki, T. Ohdaira, Y. Hirano, F. Sato
Ion beam-induced interfacial growth in Si and silicides, Pages 206-215, F. Fortuna, P. Nédellec, M.O. Ruault, H. Bernas, X.W. Lin, P. Boucaud
Secondary defect formation in self-ion irradiated silicon, Pages 216-221, R.D. Goldberg, T.W. Simpson, I.V. Mitchell, P.J. Simpson, M. Prikryl, G.C. Weatherly
Transient enhanced diffusion of dopant in preamorphised Si: the role of EOR defects, Pages 222-226, C. Bonafos, A. Martinez, M.M. Faye, C. Bergaud, D. Mathiot, A. Claverie
Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon, Pages 227-232, K.S. Jones, J. Liu, L. Zhang, V. Krishnamoorthy, R.T. DeHoff
Vacancy related defect profiles in MeV cluster-ion irradiated silicon, Pages 233-236, A. Hallén, P. Håkansson, N. Keskitalo, J. Olsson, A. Brunelle, S. Della-Negra, Y. Le Beyec
Silicon implanted with MeV 12C ions; temperature dependence of defect formation at low doses, Pages 237-241, J. Lalita, C. Jagadish, B.G. Svensson
Amorphization of silicon by elevated temperature ion irradiation, Pages 242-247, R.D. Goldberg, J.S. Williams, R.G. Elliman
The residual electrically active damage in ion implanted Si, Pages 248-251, P. Kringhøj, S. Fatima, J.S. Williams, C. Jagadish
Hyperfine interaction study of the decoration of the internal wall of nanosized voids by impurity probes, Pages 252-256, Wim Deweerd, Raf Moons, Joris Verheyden, Shmuel Bukshpan, Guido Langouche, Hugo Pattyn
Germanium implantation into amorphous silicon films, Pages 257-261, Alexey V. Ershov, Alexander A. Ezhevskii, Alexander F. Khokhlov, Dmitri A. Khokhlov, Alexander I. Mashin, Nikolay I. Mashin
Effect of Ge-related mechanical strain on defect and impurity behaviour in ion-implanted silicon, Pages 262-266, Yu. Suprun-Belevich, L. Palmetshofer
Time dependent electrical properties of GaAs doped with radioactive isotopes 67Ga and 71As, Pages 267-270, G. Rohrlack, K. Freitag, R. Vianden, R. Gwilliam, B.J. Sealy, J.G. Correia, D. Forkel-Wirth
Elevated temperature Ge implantation into Si and the effect of subsequent thermal annealing, Pages 271-276, W.C. Wong, R.G. Elliman
Ion mass dependence of normalized regrowth rate in MeV ion beam induced epitaxial crystallization, Pages 277-280, A. Kinomura, A. Chayahara, Y. Horino, Y. Mokuno, K. Fujii
Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation, Pages 281-288, E. Glaser, T. Bachmann, R. Schulz, S. Schippel, U. Richter
Ion-beam-induced epitaxial crystallisation of metastable Si1 – x –yGexCy layers fabricated by Ge and C ion implantation, Pages 289-293, Naoto Kobayashi, Masataka Hasegawa, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita
Implantation isolation in n-type InP bombarded with He+ and B+, Pages 294-297, V. Sargunas, D.A. Thompson, J.G. Simmons
The temperature dependence of ion-beam-induced amorphization in β-SiC, Pages 298-302, W.J. Weber, L.M. Wang
Temperature and dose dependence of damage production in Si+ and Se+ implanted InP, Pages 303-307, E. Wendler, T. Opfermann, P. Müller, W. Wesch
Ion implantation damage of InP and InGaAs, Pages 308-312, U.G. Akano, I.V. Mitchell, F.R. Shepherd, C.J. Miner
A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs, Pages 313-317, H.H. Tan, J.S. Williams, C. Jagadish
Silicon implant annealing kinetics in GaAs, Pages 318-322, R. Gwilliam, R. Apiwatwaja, R. Wilson, B.J. Sealy
Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs, Pages 323-327, F.D. Auret, S.A. Goodman, R.M. Erasmus, W.E. Meyer, G. Myburg
Considerations on effect of local temperature on primary defect production, Pages 328-332, J. Gyulai, F. Pászti, E. Szilágyi
P–N junction formation in 6H-SiC by acceptor implantation into n-type substrate, Pages 333-338, Mulpuri V. Rao, Jason Gardner, Peter Griffiths, O.W. Holland, G. Kelner, P.H. Chi, D.S. Simons
Investigation of radiation damage in ion implanted and annealed SiC layers, Pages 339-345, W. Wesch, A. Heft, J. Heindl, H.P. Strunk, T. Bachmann, E. Glaser, E. Wendler
Recrystallisation of relaxed SiGe alloy layers, Pages 346-349, P. Kringhøj, R.G. Elliman, M. Fyhn, S.Y. Shiryaev, A. Nylandsted Larsen
Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium, Pages 350-354, T. Bachmann, R. Schulz, E. Glaser, U. Richter, S. Schippel
Compound formation by ion beam synthesis and a comparison with alternative methods such as deposition and growth or wafer bonding, Pages 355-363, Siegfried Mantl
Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2, Pages 364-371, K.J. Reeson, M.S. Finney, M.A. Harry, S.V. Hutchinson, Y.S. Tan, D. Leong, T.R. Bearda, Z. Yang, G. Curello, K.P. Homewood, R.M. Gwilliam, B.J. Sealy
High-dose oxygen ion implanted heterointerfaces in silicon, Pages 372-378, S. Ashok, Srikanth Krishnan
Chemical and electrical properties of cavities in silicon and germanium, Pages 379-385, S.M. Myers, D.M. Follstaedt, G.A. Petersen, C.H. Seager, H.J. Stein, W.R. Wampler
Materials issues and device performances for light emitting Er-implanted Si, Pages 386-392, S. Coffa, F. Priolo, G. Franzó, A. Polman, S. Libertino, M. Saggio, A. Camera
Ion beam synthesis of planar opto-electronic devices, Pages 393-399, A. Polman, E. Snoeks, G.N. van den Hoven, M.L. Brongersma, R. Serna, J.H. Shin, P. Kik, E. Radius
Ion-beam induced sequential epitaxy of α, β and γ-FeSi2 in Si (100) at 320°C, Pages 400-403, R.L. Maltez, M. Behar, X.W. Lin
The formation and thermal stability of ion-beam-synthesized ternary MexFe1–xSi2 (Me = Co, Ni) in Si(111), Pages 404-408, A. Vantomme, M.F. Wu, G. Langouche, J. Tavares, H. Bender
Implantation-induced defects in high-dose O-implanted Si, Pages 409-414, S.L. Ellingboe, M.C. Ridgway
Silicon on an insulator produced by helium implantation and oxidation, Pages 415-418, Vito Raineri, Salvatore Ugo Campisano
Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon, Pages 419-423, E. Rimini, V. Raineri, A. La Ferla, G. Galvagno, G. Franco, A. Camera, A. Gasparotto
Diffusion and trapping of Au to cavities induced by H-implantation in Si, Pages 424-428, J. Wong-Leung, J.S. Williams, E. Nygren
Incorporation and stability of erbium in sapphire by ion implantation, Pages 429-432, E. Alves, M.F. da Silva, G.N. van den Hoven, A. Polman, A.A. Melo, J.C. Soares
Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matrices, Pages 433-437, C.M. Yang, K.V. Shcheglov, K.J. Vahala, Harry A. Atwater
Photorefractive waveguides produced by ion-implantation of fused silica, Pages 438-441, M. Verhaegen, L.B. Allard, J.L. Brebner, M. Essid, S. Roorda, J. Albert
Channel waveguides formed by germanium implantation in fused silica, Pages 442-446, P.W. Leech, M. Faith, P.C. Kemeny, M.C. Ridgway, R.G. Elliman, G.K. Reeves, W. Zhou
Production of buried waveguides in PMMA by high energy ion implantation, Pages 447-451, D.M. Rück, S. Brunner, K. Tinschert, W.F.X. Frank
Optical characterization of doped top layers in SOI structures formed by ion implantation, Pages 452-456, Yu Yuehui, Liu Xianghuai, Zou Shichang, P.L.F. Hemment
Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantation, Pages 457-460, S. Charbonneau, P.J. Poole, P.G. Piva, M. Buchanan, R.D. Goldberg, I.V. Mitchell
Ion implantation induced compositional intermixing in the InGaAs/InP MQW system for wavelength shifted waveguides, Pages 461-465, J.Z. Wan, D.A. Thompson, J.G. Simmons
Novel optical features in Cd+ ion-implanted LEC-grown GaAs, Pages 466-470, Yoko Kawasumi, Shinji Kimura, Tsutomu Iida, Akira Obara, Hajime Shibata, Naoto Kobayashi, Takeyo Tsukamoto, Yunosuke Makita
Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers, Pages 471-476, V Hofsäβ, J. Kuhn, C. Kaden, V. Härle, H. Bolay, F. Scholz, H. Schweizer, H. Hillmer, R. Lösch, W. Schlapp
Optical activation of Er3+ in silicon co-implanted with carbon, Pages 477-479, S. Uekusa, K. Shimazu, A. Majima, K. Yabuta
Structure, morphology and melting hysteresis of ion-implanted nanocrystals, Pages 480-491, Hans Henrik Andersen, Erik Johnson
Graphitization of diamond by ion impact: Fundamentals and applications, Pages 492-499, R. Kalish, S. Prawer
Creep of a crystalline metallic layer induced by GeV heavy ion irradiation, Pages 500-503, A. Benyagoub, A. Chamberod, J.C. Dran, A. Dunlop, F. Garrido, S. Klaumünzer, L. Thomé
High-dose implantation of Pt ions into Ni using the sacrificial layer technique: A comparison of Al and Al2O3 sacrificial layers, Pages 504-510, A.G. Duffy, L. Clapham, J.L. Whitton, M.C. Ridgway
The effect of a post-treatment of amorphous carbon films with high energy ion beams, Pages 511-516, A. Kolitsch, E. Richter, H. Drummer, U. Roland, J. Ullmann
Conversion of insulating thin films of MgIn2O4 into transparent conductors by ion implantation, Pages 517-521, H. Hosono, H. Un'no, N. Ueda, H. Kawazoe, N. Matsunami, H. Tanoue
Corrosion behavior of nitrogen implanted aluminum, Pages 522-526, K.C. Walter, R.A. Dodd, J.R. Conrad
Boronizing of steel by outward transport of Fe atoms during dynamic ion mixing, Pages 527-531, Tatsuya Yasunaga, Yasuaki Sugizaki, Haruo Tomari
Dislocation structure in coarse-grained copper after ion implantation, Pages 532-537, Yu.P. Sharkeev, N.V. Girsova, A.I. Ryabchikov, E.V. Kozlov, O.B. Perevalova, I.G. Brown, X.Y. Yao
On the high temperature oxidation of polycrystalline and single crystal nickel after ion implantation, Pages 538-544, Z. Rao, J.S. Williams, D.K. Sood
Molecular dynamics and experimental studies of preferred orientation induced by compressive stress, Pages 545-549, D.G. McCulloch, N.A. Marks, D.R. McKenzie, S. Prawer
Ion beam promoted lithium absorption in glassy polymeric carbon, Pages 550-554, R.L. Zimmerman, D. Ila, G.M. Jenkins, H. Maleki, D.B. Poker
Radiation damage and conductivity changes in ion implanted diamond, Pages 555-559, Q. Yang, B.V. King
Implantation of Ti and N into soda lime glass to minimize solar load and reflectivity, Pages 560-566, Gary S. Was, Victor Rotberg, Dennis Platts, John Bomback
Damage of M-type baryum hexaferrites induced by GeV-heavy ion irradiations, Pages 567-572, J.M. Costantini, F. Brisard, A. Meftah, M. Toulemonde, F. Studer
The irradiation damage response of MgO · 3Al2O3 spinel single crystal under high-fluence ion-irradiation, Pages 573-578, Kurt E. Sickafus, Ning Yu, Ram Devanathan, Michael Nastasi
Ion beam induced epitaxial recrystallization of alumina thin films deposited on sapphire, Pages 579-582, Ning Yu, Michael Nastasi
The effect of dense and dilute collision cascades on helium bubbles in metals, Pages 583-588, S.E. Donnelly, R.C. Birtcher, C. Templier
Ion beam mixing and radiation enhanced diffusion in metal/ceramic interfaces, Pages 589-596, K. Neubeck, C.-E. Lefaucheur, H. Hahn, A.G. Balogh, H. Baumann, K. Bethge, D.M. Rück
In situ ion-beam analysis and modification of sol–gel zirconia thin films, Pages 597-601, T.E. Levine, N. Yu, P. Kodali, K.C. Walter, M. Nastasi, J.R. Tesmer, C.J. Maggiore, J.W. Mayer
The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing, Pages 602-605, J.G. Marques, A.A. Melo, J.C. Soares, E. Alves, M.F. da Silva, K. Freitag
The use of low energy, ion induced nuclear reactions for proton radiotherapy applications, Pages 606-617, K.M. Horn, B. Doyle, M.N. Segal, R.W. Hamm, R.J. Adler, E. Glatstein
Ion bombardment into inner wall surfaces of tubes and their biomedical applications, Pages 618-623, M. Iwaki, A. Nakao, M. Kaibara, H. Sasabe, S. Kaneko, H. Nakajima, Y. Suzuki, M. Kusakabe, T. Fujihana
MEWA ion-implantation of high Tc superconductors, Pages 624-629, J.W. Martin, D.D. Cohen, G.J. Russell, N. Dytlewski, P.J. Evans
Local material removal by focused ion beam milling and etching, Pages 630-635, S. Lipp, L. Frey, G. Franz, E. Demm, S. Petersen, H. Ryssel
An investigation of dopant gases in plasma immersion ion implantation, Pages 636-640, Shu Qin, James D. Bernstein, Zhuofan Zhao, Chung Chan, Jiqun Shao, Stuart Denholm
Cross-sectional Raman microscopy of MeV implanted diamond, Pages 641-645, D.N. Jamieson, S. Prawer, K.W. Nugent, S.P. Dooley
Synthesis of unattainable ion implantation profiles – ‘Pseudo-implantation', Pages 646-650, I.G. Brown, A. Anders, S. Anders, R.A. Castro, M.R. Dickinson, R.A. MacGül, Z. Wang
A mewa ion source for simultaneous implantation of gas and metal ions, Pages 651-656, B.H. Wolf, H. Emig, D.M. Rück, P. Spädtke, E. Oks
Simultaneous mass-analyzed positive and negative low-energy ion beam deposition apparatus, Pages 657-661, Yuji Horino, Nobuteru Tsubouchi, Kanenaga Fujii, Toshitake Nakata, Toshinori Takagi
Industrial application of ion assisted surface modification, Pages 662-668, K. Kohlhof
Electronic stopping powers of 80–350 keV 19F ions in Ta, Nb, Ti refractory metals and Ni0.8Fe0.2 alloy, Pages 671-674, Chunyu Tan, Yueyuan Xia, Jitian Liu, Xiangdong Liu, Fengxiang Wang
New fitting formulae for simulating nuclear stopping processes, Pages 675-680, J.H. Liang, K.Y. Liao
Calculation of the energy deposition value for argon ion beam bombarded silicon on the basis of the plural interaction model, Pages 681-685, V.A. Eltekov, N.N. Negrebetskaya
Range parameters study of Au, Bi and Pb implanted into GaAs, Pages 686-689, M. R. Herberts, P.F.P. Fichtner, M. Behar
Range straggling of 1H and 2H in crystalline matrices, Pages 690-693, S.T. Nakagawa, L. Thomé, H. Saito, R.G. Wilson, C. Clerc
Aspect ratio of heavy ion tracks in track recording dielectrics, Pages 694-697, H.S. Virk, G.S. Randhawa
Depth profiling of 27A1+ implanted samples by NRA, Pages 698-701, M. Hayes, E. Friedland, S. Kalbitzer, B. Hartmann, S. Fabian
Patterns of energy dissipation in 3D fcc lattices after ion impact, Pages 702-705, P. Guan, D.R. McKenzie, B.A. Paithorpe
The method of discrete streams in the sputtering theory, Pages 706-709, A.I. Tolmachev
Mechanisms of Focusing in Sputtering: Molecular Dynamics Computer Simulation Study, Pages 710-714, V.N. Samoilov, O.S. Korsakova, E.L. Rodionova, A.M. Nikitin, V.I. Bachurin
Ion Beam Mixing of Isotopic Nickel Bilayers, Pages 715-718, C.J. Fell, B.V. King, M. Petravic, L.S. Wielunski
Ion beam mixing of metal thin films with energetic metal ions, Pages 719-723, F.J. Paoloni, P. J. Evans, K.M. Yu, Z. Wang, I.G. Brown
Mixing effects by electronic processes in MgO containing Na nanoprecipitates bombarded with GeV heavy ions and 20 MeV cluster beams, Pages 724-727, M. BERANGER, P. THEVENARD, R. BRENIER, B. CANUT, S.M.M. RAMOS, A. BRUNELLE, S. DELLA NEGRA, Y. LE BEYEC, E. BALANZAT
Formation of TiO2 Films as a Photocatalytic Material by Ion Beam Assisted Reactive Deposition Method – TDS Study of Ar Atom Incorporation in the TiO2 Films, Pages 728-731, M. Sasase, T. Yamaki, K. Miyake, I. Takano, S. Isobe
Survey on the Properties of A12O3 Coatings produced by Ion Beam Assisted Deposition (IBAD), Pages 732-735, R. Emmerich, B. Enders, G.K. Wolf, J. Kúdeiha, P. Lukáč, K. Baba, R. Hatada
Prediction of Single Phase Formation of Non-equilibrium Pseudobinary Nitrides Assisted by Energetic Particle Bombardment, Pages 736-739, Y. Makino, Y. Setsuhara, S. Miyake
Study of Boron Nitride Films Synthesized By Ion Beam and Vapor Deposition, Pages 740-743, Satoshi Nishiyama, Akimori Ebe, Naoto Kuratani, Yasushi Iwamoto, Kiyoshi Ogata
The Synthesis of TiB2 Films by Ion Beam Assisted Deposition, Pages 744-747, Y. Wang, Y. Setsuihara, S. Miyake
Ceramic thermal barrier films prepared with a technique of combining ion, electron and atom beams, Pages 748-751, N.K. Huang
THE EFFECT OF ION-BEAM INDUCED STRAIN ON THE NUCLEATION DENSITY OF CHEMICAL VAPOUR DEPOSITED DIAMOND., Pages 752-756, P.S. Weiser, S. Prawer, K.W. Nugent, A.A. Bettiol, L.I. Kostidis, S.P. Dooley, D.N. Jamieson
ELECTRICAL PROPERTY AND STRUCTURE OF DIAMOND LIKE CARBON FILMS PREPARED BY IBAD, Pages 757-760, Zhu Hong, Liu Xianghuai, Ren Congxin, Yu Yuehui, Zou Shichang
Metal and Contaminant Accumulation in Ion Beam Induced Film Growth, Pages 761-768, G Carter, M J Nobes, M G McLaren
Effect of noble gas plasmas on the growth of InP by gas-source molecular beam epitaxy, Pages 769-772, D.A. Thompson, D.B. Mitchell, B.J. Robinson, R.R. LaPierre, P Mascher
Energy dependence on crystalline growth of aluminum nitride films prepared by ion beam and vapor deposition method, Pages 773-776, K. Ogata, S. Nishiyama, A. Ebe, Y Andoh, F Fujimoto
Study of crystallization of copper films prepared by ion beam and vapour deposition method on polyimide substrates, Pages 777-780, Akinori Ebe, Eiji Takahashi, Naoto Kuratani, Satoshi Nishiyama, Osamu Imai, Kiyoshi Ogata, Yuichi Setsuhara, Shoji Miyake
Anomalous resistive transition of furnace annealed rf-sputtering YBa2Cu3Ox thin films on Si wafers, Pages 781-784, Kazuhiro Hatanaka, Takashi Itoh, Masakazu Tatumi, Katsuhiro Yokota
Investigation of thermodesorption processes of H2, CO and CO2 from stainless steels modified by implantation of hydrogen and oxygen ions, Pages 785-788, T.D. Radjabov, R.E. Mukhamadiev, A.V Sharudo
The effect of boron doping on the thermal behaviour of EOR defects in Silicon, Pages 789-792, C. Bonafos, L. Laânab, M.M. Faye, D. Alquıer, A. Martinez, D. Mathiot, A. Claverie
Correlation between End-Of-range defect densities and electrical properties of p+/n junctions formed by B implantation into Ge-preamorphised Si substrates, Pages 793-796, D. Alquier, C. Bergaud, A. Martinez, M. Minondo, C. Jaussaud, L. Laanab, C. Bonafos, A. Qaverie
Anomalous surface damage production during high energy implantation analyzed by ellipsometry and RBS, Pages 797-801, T. Lohner, M. A. El-Sherbiny, N. Q. Khánh, M. Fried, H. Wormeester, J. Gyulai
Strain profiles in phosphorus implanted (100)-silicon, Pages 802-805, M. Remmler, L. Frey, Z.E. Horvath, H. Ryssel
LATTICE POSITION OF DISPLACED ATOMS IN BORON IMPLANTED SILICON, Pages 806-809, E. Wendler, B. Weber, W. Wesch, U. Zammit, M. Marinelli
High-temperature boron and phosphorus ion implantation in silicon, Pages 810-814, G.V. Gadiyak, A.V. Bibik
Phosphorus Doping and Passivation Processes for Poly and Monocrystalline Silicon Using Ion Plasma Source, Pages 815-818, B.N. Mukashev, M.F. Tamendarov, T.B. Tashenov, A.M. Mukhitdinov
Observation of damage in low-dose ion implanted silicon by TEM in conjunction with the Cu decoration technique, Pages 819-822, Masahito Watanabe, Mitsuhiro Horikawa, Tomohisa Kitano
Crystal defects production in silicon by molecular beam implantation, Pages 823-827, E. Kótai, N.Q. Khanh, J. Gyulai
Investigation of the relation between stress evolution and surface deformations in high dose MeV energy He implanted Si, Pages 828-831, C. Hajdu, M. Fried, F. Pászti
Defect Evolution in Hydrogen Implanted Silicon, Pages 832-836, C.E. Ascheron, J. Wong-Leung, M. Petravic, J.S. Williams
Radiation effects of 20-100 keV deuterium ions in silicon, Pages 837-840, Y. Tagishi, T. Katabuchi, H. Kishita, K. Mizukoshi, Y. Mukouhara, N. Yamada
Atomic hydrogen passivation of ion implantation damage at Si-SiO2 interfaces, Pages 841-844, S. Kar, S. Ashok
EFFECTS OF MeV ION IRRADIATION ON CRYSTALLIZATION OF AMORPHOUS Ge FILMS, Pages 845-848, S. Nakao, K. Saitoh, M. Ikeyama, H. Niwa, S. Tanemura, Y. Miyagawa, S. Miyagawa
Iodine Induced Damage in Semiconductor Materials During Heavy Ion Recoil Elastic Recoil Detection Analysis, Pages 849-852, Scott R. WALKER, Peter N. JOHNSTON, Ian F. BUBB, Warren B. STANNARD, David N. JAMIESON, Sean P. DOOLEY, David D. COHEN, Nick DYTLEWSKI, Jarrod W. MARTIN
Defect levels in H+- bombarded gallium arsenide, Pages 853-856, T. Schmidt, L. Palmetshofer
The influence of implantation-induced non-stoichiometry on the solid-phase epitaxial growth of amorphized GaAs, Pages 857-861, K.B. Belay, D.J. Llewellyn, M.C. Ridgway
Flux and temperature dependence of amorphisation of GaAs irradiated with Si ions., Pages 862-865, R.A. Brown, J.S. Williams
Electrical characterization of defects introduced in n-GaAs by carbon-ion irradiation, Pages 866-869, S.A. Goodman, F.D. Auret, G. Myburg
Electronic properties of defects introduced during sputter deposition of Cr Schottky contacts on GaAs, Pages 870-873, Y. Leclerc, F.D. Auret, S.A. Goodman, G. Myburg, C. Schutte
Shallow acceptor behavior of calcium in GaAs, Pages 874-877, H.L. Shen, Y. Makita, A. Yamada, S. Kimura, A. Obara, N. Kobayashi, C.L. Lin, S.C. Zou
Electrical activation process of C implanted semi-insulating GaAs, Pages 878-881, K. Kuriyama, Takashi Kato, K. Tomizawa, Yukimi Takahashi, Y. Aoki, H. Takeshita, S. Yamamoto, H. Naramoto
Interfacial Amorphization and Improved Ion Beam Induced Crystallization of (100)-GaAs, Pages 882-886, E. Glaser, T. Bachmann, R. Schulz, U. Richter
Electrical properties of S+-implanted GaAs annealed by covering with As-doped a-Si:H films, Pages 887-890, Masanori Sakag