Indium nitride and related alloys

 Content: Molecular-beam epitaxy of InN 1; Y. Nanishi, T. Araki, and T. Yamaguchi Thermal stability, surface kinetics, and MBE growth diagrams for N- and In-face InN; C. S. Gallinat, G. Koblmuller, and J. S. Speck Polarity-dependent epitaxy control of InN, InGaN and InAlN; X. Q. Wang and A. Yoshikawa InN in brief: Conductivity and chemical trends; P. D. C. King, T. D. Veal, and C. F. McConville Transport properties of InN; V. Cimalla, V. Lebedev, O. Ambacher, V. M. Polyakov, F. Schwierz, M. Niebelschutz, G. Ecke, T. H. Myers, and W. J. Schaff Electronic states in InN and lattice dynamics of InN and InGaN; V. Yu. Davydov and A. A. Klochikhin Optical properties of InN and related alloys; J. W. L. Yim and J. Wu Theory of InN bulk band structure; J. Furthmuller, F. Fuchs, and F. Bechstedt Ellipsometry of InN and related alloys; R. Goldhahn, P. Schley, and M. Roppischer Electronic properties of InN and InGaN: Defects and doping; W. Walukiewicz, K. M. Yu, J. W. Ager III, R. E. Jones, and N. Miller Theory of native point defects and impurities in InN; A. Janotti and C. G. Van deWalle Surface electronic properties of InN and related alloys; T. D. Veal, P. D. C. King, and C. F. McConville Theory of InN surfaces; C. G. Van deWalle Structure of InN and InGaN: Transmission electron microscopy studies; Z. Liliental-Weber InN-based dilute magnetic semiconductors; S. M. Durbin InN-based low dimensional structures; S. B. Che and A. Yoshikawa InN nanocolumns; J. Grandal, M. A. Sanchez-Garcia, E. Calleja, S. Lazic, E. Gallardo, J. M. Calleja,E. Luna, A. Trampert, M. Niebelschutz, V. Cimalla, and O. Ambacher