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ویرایش: 1 نویسندگان: (auth.), O. Madelung, U. Rössler, M. Schulz (eds.) سری: Landolt-Börnstein - Group III Condensed Matter 41A2b : Condensed Matter ISBN (شابک) : 9783540430865, 9783540313588 ناشر: Springer-Verlag Berlin Heidelberg سال نشر: 2003 تعداد صفحات: 1112 زبان: English فرمت فایل : PDF (درصورت درخواست کاربر به PDF، EPUB یا AZW3 تبدیل می شود) حجم فایل: 14 مگابایت
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کلمات کلیدی مربوط به کتاب ناخالصی ها و عیوب عناصر گروه IV، ترکیبات IV-IV و III-V. قسمت ب: ترکیبات گروه IV-IV و III-V.: Landolt-Börnstein، مواد نوری و الکترونیکی
در صورت تبدیل فایل کتاب Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. به فرمت های PDF، EPUB، AZW3، MOBI و یا DJVU می توانید به پشتیبان اطلاع دهید تا فایل مورد نظر را تبدیل نمایند.
توجه داشته باشید کتاب ناخالصی ها و عیوب عناصر گروه IV، ترکیبات IV-IV و III-V. قسمت ب: ترکیبات گروه IV-IV و III-V. نسخه زبان اصلی می باشد و کتاب ترجمه شده به فارسی نمی باشد. وبسایت اینترنشنال لایبرری ارائه دهنده کتاب های زبان اصلی می باشد و هیچ گونه کتاب ترجمه شده یا نوشته شده به فارسی را ارائه نمی دهد.
جلد III/17a-i و III/22a,b (مکمل) در مورد فیزیک و فناوری نیمه هادی ها قبلاً منتشر شده است، دومی داده های جدید را در مورد عناصر مهم فن آوری گروه IV، فقط ترکیبات IV-IV و III-V پوشش می دهد. انبوهی از داده های بیشتر از دهه گذشته در حال حاضر توسط بیش از 30 متخصص مشهور در زمینه نیمه هادی ها مورد ارزیابی انتقادی قرار گرفته است. جلد III/41 برای برآورده کردن خواستههای دانشمندان امروزی و ارائه یک نمای کلی کامل از دادههای نیمهرسانا، تمام دادههای موجود تا کنون را ارائه میکند. آنها به روش زیر منتشر خواهند شد: مجموعه ای از هشت جلد فرعی فقط داده های تکمیلی جلدهای III/17 و 22 را پوشش می دهد. در ضمیمه هر زیرجلد، یک CD-ROM حاوی یک نسخه کامل، اصلاح شده و به روز از همه داده های مربوطه است. برای هر ماده جداگانه، اطلاعات در اسناد کاربرپسند، حاوی داده های عددی، ارقام و مراجع ارائه می شود. دسترسی آسان به اسناد از طریق کلمات کلیدی ماده و ویژگی، فهرستبندی و بازیابی کامل متن فراهم میشود.
Vols. III/17a-i and III/22a,b(supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today´s scientists and to offer a complete overview on semiconductor data, volume III/41 provides all data available so far. They will be published in the following way: a series of eight subvolumes cover only the supplementary data to vols.III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.
List of symbols....Pages 1-6
silicon carbide (SiC), general characterization....Pages 1-3
silicon carbide (SiC), stacking order and number of inequivalent lattice sites in SiC....Pages 1-1
silicon carbide (SiC), solubility of impurities....Pages 1-5
silicon carbide (SiC), diffusion of impurities....Pages 1-8
silicon carbide (SiC), impurities and defect levels, general....Pages 1-24
silicon carbide (SiC), energy levels and capture cross sections, identified defect centers....Pages 1-20
silicon carbide (SiC), energy levels and capture cross sections, defect centers not identified....Pages 1-10
silicon carbide (SiC), defects in SiC....Pages 1-5
silicon carbide (SiC), optical properties of impurities and other defects: shallow donors....Pages 1-12
silicon carbide (SiC), optical properties of impurities and other defects: acceptors Al, Ga, B and Be....Pages 1-14
silicon carbide (SiC), optical properties of impurities and other defects: transition metals....Pages 1-11
silicon carbide (SiC), optical properties of impurities and other defects: rare earth elements: erbium....Pages 1-8
silicon carbide (SiC), optical properties of impurities and other defects: hydrogen....Pages 1-7
silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects....Pages 1-21
boron nitride (BN), impurities in cubic and hexagonal boron nitride....Pages 1-9
boron nitride (BN), deep defect states in cubic boron nitride....Pages 1-2
boron phosphide (BP), deep defect states....Pages 1-4
gallium nitride (GaN), solubility and diffusion of impurities....Pages 1-2
gallium nitride (GaN), shallow impurities....Pages 1-9
gallium nitride (GaN), luminescence peak energies....Pages 1-2
gallium nitride (GaN), properties of bound excitons....Pages 1-5
gallium nitride (GaN), properties of deep defect states....Pages 1-7
gallium nitride (GaN), esr and odmr data on hexagonal GaN....Pages 1-3
gallium phosphide (GaP), solubility and diffusion of impurities....Pages 1-5
gallium phosphide (GaP), vibrational modes of impurities and defects....Pages 1-9
gallium phosphide (GaP), vibrational modes of substitutional impurity complexes....Pages 1-4
gallium phosphide (GaP), vibrational modes of irradiation defects....Pages 1-4
gallium phosphide (GaP), vibrational modes of hydrogen paired with impurity atoms....Pages 1-2
gallium phosphide (GaP), shallow impurities, general remarks....Pages 1-3
gallium phosphide (GaP), binding energies of donors....Pages 1-2
gallium phosphide (GaP), splittings of 1S donor ground states....Pages 1-2
gallium phosphide (GaP), excited states of donors....Pages 1-2
gallium phosphide (GaP), binding energies of acceptors relative to the valence band maximum....Pages 1-3
gallium phosphide (GaP), excited states of acceptors....Pages 1-2
gallium phosphide (GaP), deformation potential of impurity states....Pages 1-2
gallium phosphide (GaP), spin-orbit coupling in bound hole states....Pages 1-2
gallium phosphide (GaP), bound excitons, general remarks....Pages 1-3
gallium phosphide (GaP), localization energies and splitting of excitons bound to donors....Pages 1-3
gallium phosphide (GaP), localization energies and splitting of excitons bound to acceptors....Pages 1-3
gallium phosphide (GaP), excitons bound to isoelectronic substituents and other neutral centers, general remarks....Pages 1-4
gallium phosphide (GaP), localization energies of bound excitons....Pages 1-6
gallium phosphide (GaP), J - J coupling and crystal field splittings of bound excitons....Pages 1-2
gallium phosphide (GaP), scattering cross-sections s for the no-phonon creation of free excitons....Pages 1-2
gallium phosphide (GaP), localization energies of multiple bound excitons....Pages 1-2
gallium phosphide (GaP), transition lifetimes of bound excitons....Pages 1-4
gallium phosphide (GaP), ESR and ENDOR data for shallow impurities....Pages 1-2
gallium phosphide (GaP), ESR data of shallow acceptors....Pages 1-2
gallium phosphide (GaP), deep defects, general remarks....Pages 1-1
gallium phosphide (GaP), energies and capture cross sections of electron traps....Pages 1-3
gallium phosphide (GaP), nitrogen-related electron traps in GaP....Pages 1-2
gallium phosphide (GaP), energies and capture cross sections of hole traps....Pages 1-3
gallium phosphide (GaP), properties of deep defect states induced by high energy irradiation....Pages 1-2
gallium phosphide (GaP), properties of electron and hole traps induced by proton irradiation....Pages 1-2
gallium phosphide (GaP), optical properties of deep defects: luminescence bands....Pages 1-8
gallium phosphide (GaP), optical properties of deep defects: optical absorption bands....Pages 1-5
gallium phosphide (GaP), ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(4)....Pages 1-4
gallium phosphide (GaP), ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(3) Y....Pages 1-3
gallium phosphide (GaP), ESR, ENDOR, and ODMR data: gallium vacancy....Pages 1-5
gallium phosphide (GaP), ESR, ENDOR, and ODMR data: electron-irradiated GaP:Fe....Pages 1-3
gallium phosphide (GaP), defect levels associated with transition metal impurities: energy levels....Pages 1-9
gallium phosphide (GaP), defect levels associated with transition metal impurities: capture and emission data....Pages 1-5
gallium phosphide (GaP), excited states of defects accociated with transition metal impurities....Pages 1-14
gallium phosphide (GaP), optical properties of isolated, substitutional transition metal impurities....Pages 1-21
gallium phosphide (GaP), optical properties related to transition metal complexes....Pages 1-3
gallium phosphide (GaP), magnetic properties and ESR of isolated, substitutional transition metal impurities....Pages 1-6
gallium phosphide (GaP), magnetic properties and ESR of transition metal impurities complexes....Pages 1-4
gallium phosphide (GaP), properties of rare earth impurities....Pages 1-12
gallium phosphide (GaP), irradiation effects in rare earths doped GaP....Pages 1-3
gallium arsenide (GaAs), solubility of impurities....Pages 1-4
gallium arsenide (GaAs), diffusion of impurities and defects, general....Pages 1-2
gallium arsenide (GaAs), self-diffusion coefficients....Pages 1-5
gallium arsenide (GaAs), impurity diffusion coefficients....Pages 1-10
gallium arsenide (GaAs), diffusion of Zn in GaAs....Pages 1-11
gallium arsenide (GaAs), vibrational modes of impurities and defects: isolated impurities....Pages 1-11
gallium arsenide (GaAs), vibrational modes of impurities and defects: isotopic clusters....Pages 1-4
gallium arsenide (GaAs), vibrational modes of impurities and defects: substitutional impurity complexes....Pages 1-6
gallium arsenide (GaAs), vibrational modes of impurities and defects: lithium complexes....Pages 1-3
gallium arsenide (GaAs), vibrational modes of impurities and defects: irradiation defects....Pages 1-3
gallium arsenide (GaAs), calibration of local vibrational mode absorption lines....Pages 1-2
gallium arsenide (GaAs), vibrational modes of impurities and defects: hydrogen complexes....Pages 1-6
gallium arsenide (GaAs), shallow donors: chemical shifts, photoconductivity measurements and photoluminescence....Pages 1-13
gallium arsenide (GaAs), binding energy of residual donors....Pages 1-2
gallium arsenide (GaAs), bound exciton transition energies....Pages 1-2
gallium arsenide (GaAs), shallow acceptors: ground state binding energies, general remarks....Pages 1-3
gallium arsenide (GaAs), acceptor ground state binding energies....Pages 1-4
gallium arsenide (GaAs), properties of acceptor excited states....Pages 1-3
gallium arsenide (GaAs), energy splittings of excited acceptor states....Pages 1-3
gallium arsenide (GaAs), transition energies of highly excited acceptor states....Pages 1-2
gallium arsenide (GaAs), bound exciton lifetimes....Pages 1-2
gallium arsenide (GaAs), shallow defects and impurity complexes: the 1.5040–1.5110 eV photoluminescence lines....Pages 1-4
gallium arsenide (GaAs), shallow defects and impurity complexes: copper complexes....Pages 1-4
gallium arsenide (GaAs), ESR data for shallow defects....Pages 1-2
gallium arsenide (GaAs), heavy doping effects....Pages 1-6
gallium arsenide (GaAs), intrinsic or unidentified deep defect states....Pages 1-3
gallium arsenide (GaAs), electron traps (cross section not known)....Pages 1-4
gallium arsenide (GaAs), electron traps (directly measured carrier cross sections)....Pages 1-3
gallium arsenide (GaAs), hole traps (directly measured cross sections)....Pages 1-2
gallium arsenide (GaAs), hole traps (cross section not measured)....Pages 1-2
gallium arsenide (GaAs), radiation-induced deep defect states: electron traps induced by electron irradiation....Pages 1-2
gallium arsenide (GaAs), radiation-induced deep defect states: hole traps induced by electron irradiation....Pages 1-2
gallium arsenide (GaAs), electron traps induced by proton and heavy ion implantation....Pages 1-3
gallium arsenide (GaAs), gallium vacancy....Pages 1-2
gallium arsenide (GaAs), hole traps induced by proton and heavy ion implantation....Pages 1-2
gallium arsenide (GaAs), low temperature grown GaAs....Pages 1-4
gallium arsenide (GaAs), oxygen and hydrogen in GaAs....Pages 1-2
gallium arsenide (GaAs), optical properties of deep defects, general remarks....Pages 1-2
gallium arsenide (GaAs), photoluminescence bands....Pages 1-8
gallium arsenide (GaAs), experimental results on the 0.67–0.68 eV photoluminescence band....Pages 1-8
gallium arsenide (GaAs), experimental results on the 0.77–0.8 eV photoluminescence band....Pages 1-4
gallium arsenide (GaAs), photoluminescence in n- and p-type GaAs....Pages 1-7
gallium arsenide (GaAs), the EL2/As(Ga) defect....Pages 1-10
gallium arsenide (GaAs), optical transitions in absorption related to the EL2 defect....Pages 1-6
gallium arsenide (GaAs), optical bands related to the 78/203 meV acceptor....Pages 1-3
gallium arsenide (GaAs), photoluminescence of low temperature grown GaAs....Pages 1-5
gallium arsenide (GaAs), ESR, ENDOR, and ODMR data....Pages 1-9
gallium arsenide (GaAs), properties of plastically deformed GaAs....Pages 1-4
gallium arsenide (GaAs), properties of fast-electron-irradiated GaAs....Pages 1-7
gallium arsenide (GaAs), energy levels of transition metal impurities....Pages 1-17
gallium arsenide (GaAs), capture and emission data for transition metal impurities....Pages 1-12
gallium arsenide (GaAs), excited states related to transition metal impurities....Pages 1-6
gallium arsenide (GaAs), optical properties of isolated transition metal impurities....Pages 1-23
gallium arsenide (GaAs), optical properties of transition metal impurity complexes....Pages 1-11
gallium arsenide (GaAs), magnetic properties and ESR of transition metal impurities....Pages 1-1
gallium arsenide (GaAs), magnetic properties of isolated, substitutional transition metal impurities....Pages 1-11
gallium arsenide (GaAs), magnetic properties of transition metal complexes....Pages 1-2
gallium arsenide (GaAs), properties of rare earth impurities....Pages 1-20
gallium antimonide (GaSb), diffusion of impurities and defects....Pages 1-11
gallium antimonide (GaSb), vibrational modes of impurities....Pages 1-2
gallium antimonide (GaSb), shallow impurities and defects....Pages 1-5
gallium antimonide (GaSb), bound excitons....Pages 1-7
gallium antimonide (GaSb), deep defects....Pages 1-1
gallium antimonide (GaSb), deep states introduced by donors....Pages 1-4
gallium antimonide (GaSb), hole and electron traps....Pages 1-2
gallium antimonide (GaSb), radiation induced deep defect states....Pages 1-2
indium phosphide (InP), diffusion of impurities and defects....Pages 1-8
indium phosphide (InP), vibrational modes of isolated impurities....Pages 1-4
indium phosphide (InP), shallow impurities and defects: general remarks....Pages 1-2
indium phosphide (InP), data from photoconductivity measurements....Pages 1-3
indium phosphide (InP), data from photoluminescence (I)....Pages 1-5
indium phosphide (InP), properties of the (D(+)X) exciton complex....Pages 1-4
indium phosphide (InP), exciton impurity transition lifetime....Pages 1-2
indium phosphide (InP), properties of acceptor impurities....Pages 1-5
indium phosphide (InP), properties of excitons bound to acceptors....Pages 1-2
indium phosphide (InP), acceptor excited states....Pages 1-3
indium phosphide (InP), deformation potentials for bound holes....Pages 1-2
indium phosphide (InP), ESR and ENDOR data: the electron g-factor....Pages 1-2
indium phosphide (InP), deep impurities, general....Pages 1-1
indium phosphide (InP), intrinsic or unidentified deep defect states....Pages 1-6
indium phosphide (InP), radiation-induced deep defect states....Pages 1-3
indium phosphide (InP), 1 MeV electron irradiation-induced hole traps, measured by DLTS....Pages 1-3
indium phosphide (InP), data from photoluminescence (II)....Pages 1-8
indium phosphide (InP), ESR and ODMR data....Pages 1-6
indium phosphide (InP), energy levels of transition metal impurities....Pages 1-7
indium phosphide (InP), capture and emission data of transition metal impurities....Pages 1-9
indium phosphide (InP), excited states of transition metal impurities....Pages 1-4
indium phosphide (InP), optical properties of transition metal impurities....Pages 1-16
indium phosphide (InP), magnetic properties and ESR of transition metal impurities....Pages 1-5
indium phosphide (InP), properties of rare earth impurities....Pages 1-3
indium phosphide (InP), photoluminescence and optical spectrometry of rare earth impurities....Pages 1-18
indium phosphide (InP), magnetic resonance of rare earths impurities....Pages 1-6
indium phosphide (InP), irradiation effects of rare earths impurities....Pages 1-3
indium arsenide (InAs), solubility of impurities....Pages 1-2
indium arsenide (InAs), self-diffusion coefficients....Pages 1-2
indium arsenide (InAs), impurity diffusion coefficients....Pages 1-4
indium arsenide (InAs), vibrational modes of impurities....Pages 1-2
indium arsenide (InAs), shallow impurities....Pages 1-6
indium arsenide (InAs), deep defect states....Pages 1-2
indium arsenide (InAs), transition metal impurities....Pages 1-2
indium arsenide (InAs), magnetic properties of transition metal impurities....Pages 1-3
indium antimonide (InSb), self-diffusion coefficients....Pages 1-3
indium antimonide (InSb), diffusion coefficients of impurities....Pages 1-7
indium antimonide (InSb), vibrational modes of substitutional impurities....Pages 1-2
indium antimonide (InSb), binding energies of shallow impurities....Pages 1-7
indium antimonide (InSb), bound excitons....Pages 1-3
indium antimonide (InSb), deep impurities....Pages 1-6
indium antimonide (InSb), radiation-induced defect states....Pages 1-2
indium antimonide (InSb), transition metal impurities....Pages 1-2
gallium arsenide phosphide (GaAs(1-x)P(x)), solubility and diffusion of impurities....Pages 1-7
gallium arsenide phosphide (GaAs(1-x)P(x)), deep defect states....Pages 1-21
gallium arsenide phosphide (GaAs(1-x)P(x)), transition metal impurities....Pages 1-6
gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states....Pages 1-4
indium arsenide phosphide (InAs(1-x)P(x)), solubility and diffusion of impurities....Pages 1-4
gallium aluminum arsenide (Ga(1-x)Al(x)As), solubility and diffusion of impurities....Pages 1-5
gallium aluminum arsenide (Ga(1-x)Al(x)As), shallow impurities and defects....Pages 1-19
gallium aluminum arsenide (Ga(1-x)Al(x)As), deep defects....Pages 1-14
gallium aluminum arsenide (Ga(1-x)Al(x)As), optical properties of deep defects....Pages 1-5
gallium aluminum arsenide (Ga(1-x)Al(x)As), transition metal impurities....Pages 1-6
gallium aluminum arsenide (Ga(1-x)Al(x)As), rare earth impurities....Pages 1-6
gallium aluminum antimonide (Ga(1-x)Al(x)Sb), deep defect states....Pages 1-2
gallium indium arsenide (Ga(1-x)In(x)As), solubility and diffusion of impurities....Pages 1-7
gallium indium arsenide (Ga(1-x)In(x)As), defect levels, optical properties of impurities....Pages 1-13
gallium indium phosphide (Ga(x)In(1-x)P), defect levels....Pages 1-4
gallium indium phosphide (Ga(x)In(1-x)P), transition metal impurities....Pages 1-4
gallium indium phosphide (Ga(x)In(1-x)P), rare earth impurities....Pages 1-3
gallium indium arsenide phosphide (Ga(x)In(1-x)As(y)P(1-y)), impurities and defects....Pages 1-4
gallium aluminum indium phosphide ((Ga(x)Al(1-x))(y)In(1-y)P), deep defects....Pages 1-4
indium gallium aluminum arsenide ((Ga(x)Al(1-x))(y)In(1-y)As), deep defects....Pages 1-2
gallium aluminum arsenide antimonide (Ga(x)Al(1-x)As(y)Sb(1-y)), deep defects....Pages 1-2
aluminum nitride (AlN), impurities and defects....Pages 1-6
aluminum arsenide (AlAs), vibrational modes of impurities....Pages 1-3
aluminum arsenide (AlAs), shallow impurities and defects....Pages 1-4
aluminum arsenide (AlAs), deep defect states....Pages 1-4
aluminum antimonide (AlSb), vibrational modes....Pages 1-2
aluminum antimonide (AlSb), shallow impurities....Pages 1-3
aluminum antimonide (AlSb), deep impurities....Pages 1-4