III-Nitrides Light Emitting Diodes: Technology and Applications

Preface
Acknowledgements
Brief Introduction of This Book
Contents
About the Author
1 Introduction
	References
2 Basic Principles of LED
	2.1 LED Luminescence Principle
		2.1.1 History and Principle of Lighting Source
		2.1.2 p–n Junction and the Principle of LED Luminescence
	2.2 Radiation and Non-radiation Recombination
	2.3 LED Optical and Electrical Characteristics
		2.3.1 LED Quantum Efficiency
		2.3.2 Radiation Spectrum
		2.3.3 Basic Photometric Concepts in LED
		2.3.4 Electrical Characteristics of LED
	2.4 Principle of White LED
		2.4.1 The Principle of Three Primary Colors and Addition of Light
		2.4.2 The Realization Method of White LED
	References
3 Properties and Testing of Group III-Nitride LED Materials
	3.1 Crystal Structure and Band Structure of Group III Nitride
		3.1.1 Crystal Structure
		3.1.2 Band Structure
	3.2 Polarization Effect of Group III Nitride Materials
		3.2.1 Polarization Effect
		3.2.2 Influence of Polarization Effect
	3.3 Doping of Group III-Nitride LED Materials
		3.3.1 Doping of Nitride LED Materials
	3.4 Test and Analysis of the Properties of Group III Nitride Materials
		3.4.1 Structural and Morphological Analysis
		3.4.2 Surface and Film Composition Analysis
		3.4.3 Other Photoelectric Test Methods
	References
4 Epitaxial of III-Nitride LED Materials
	4.1 Basic Models of Epitaxial
		4.1.1 3-D Growth Mode (Volmer-Weber Mode)
		4.1.2 2-D Growth Mode (Frank-Vander Merwe Mode)
		4.1.3 2-D and 3-D Mixed Growth Mode (Stranski-Krastanob Mode)
	4.2 Substrate for Epitaxial Growth of III-Nitride LEDs (Sapphire/Si/SiC/LiAlO2/GaN)
	4.3 Group III Nitride LED Epitaxial Technology
		4.3.1 LPE Method
		4.3.2 MBE Method
		4.3.3 MOCVD Method
		4.3.4 HVPE Method
	4.4 Two-Step Growth Method for MOCVD Grown Nitride Materials
		4.4.1 Surface Dynamics for Film Growth
		4.4.2 Two-Step Growth Program for GaN/Sapphire by MOCVD
	4.5 Influence of Growth Conditions on Epitaxial Layer Quality of Group III Nitride Materials
		4.5.1 Effect of Buffer Layer Growth Conditions on Material Quality
		4.5.2 Effect of Rough Layer Growth Conditions
	4.6 Epitaxial Technology of High Quality GaN on SiC Substrate
		4.6.1 Basic Properties of SiC
		4.6.2 Nucleation and Growth of GaN on SiC Substrate
		4.6.3 Roots of GaN Stress on SiC Substrates
	References
5 InGaN/GaN Multiple Quantum Wells Materials as Well as Blue and Green LEDs
	5.1 Introduction to InGaN Material System
	5.2 Polarization Effects in InGaN/GaN Multiple Quantum Wells Materials
		5.2.1 Polarity of GaN-Based Materials
		5.2.2 Spontaneous Polarization and Piezoelectric Polarization
	5.3 Quantum-Confined Stark Effect
		5.3.1 Effect on Transition Energy Levels
		5.3.2 Effect on Luminous Intensity
	5.4 Carrier Localization in InGaN/GaN Multiple Quantum Wells
	5.5 Green LED and Non-polar, Semi-polar LED
		5.5.1 Polar Surface High in Composition Green LEDs
		5.5.2 Semi-polar and Non-polar Materials
		5.5.3 Research Progress on Semi-polar and Non-polar LEDs
	References
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
	6.1 Introduction of AlGaN Material System
	6.2 Optical and Electrical Properties of AlGaN Materials
	6.3 Epitaxial Growth and Doping Techniques for AlGaN Materials
	6.4 Structure Design and Fabrication of UV LEDs
	References
7 III-Nitride LED Quantum Efficiency Improvement Technology
	7.1 Three Structures of LED
	7.2 Internal Quantum Efficiency Improvement Technology
		7.2.1 Homo-Epitaxial Growth of GaN
		7.2.2 Multiple Quantum Wells
		7.2.3 Active Region Doping
		7.2.4 Electronic Barrier Layer
	7.3 Light Extraction Efficiency Improvement Technology
		7.3.1 Patterned Sapphire Substrate
		7.3.2 Surface Roughening
		7.3.3 Reflector
		7.3.4 Flip-Chip Structure
		7.3.5 Photonic Crystal
	7.4 Current Injection Efficiency Improvement Technology
		7.4.1 Current Spreading Layer
		7.4.2 Current Distribution Theory
		7.4.3 Current Blocking Technique
	7.5 Droop Effect
		7.5.1 Auger Recombination Effect
		7.5.2 Electronic Overflow
	References
8 III-Nitride LED Chip Fabrication Techniques
	8.1 Group III Nitride LED Fabrication Process
	8.2 Photolithography
		8.2.1 Mask and Photoresist
		8.2.2 Lithography Process
	8.3 Etching Process
		8.3.1 Etching Parameters
		8.3.2 Wet Etching and Dry Etching
		8.3.3 Etching of GaN Materials
		8.3.4 Etching of ITO and SiO2 Materials
	8.4 Evaporation and Sputtering
		8.4.1 Metal Evaporation
		8.4.2 SiO2 Passivation Layer
	8.5 Ohmic Contacts
		8.5.1 n-type GaN Ohmic Contact
		8.5.2 p-type GaN Ohmic Contact
		8.5.3 Specific Contact Resistivity
		8.5.4 Transparent Electrode Technology
	8.6 Flip-Chip LEDs
	8.7 Vertical Structure LEDs
		8.7.1 Electroplating Technology
		8.7.2 Bonding Technology
		8.7.3 Laser Lift-Off
	References
9 Packaging of Group-III Nitride LED
	9.1 Group III Nitride LED Packaging Materials
		9.1.1 LED Chip
		9.1.2 Lead Frame of LED
		9.1.3 LED Die Bonding Glue
		9.1.4 Bonding Wire
		9.1.5 LED Packaging Adhesive
		9.1.6 Thermal Interface Material
		9.1.7 Substrate Material
	9.2 Group III Nitride LED Encapsulation Process
	9.3 LED Packaging Technology
		9.3.1 White LED Package Technology
		9.3.2 UV Packaging Technology
		9.3.3 High Power Density Packaging Technology
		9.3.4 Wafer Level Packaging Technology
	9.4 Package and System Cooling Technology
		9.4.1 Packaging and System Cooling Technology
		9.4.2 LED Thermal Testing Technology
	9.5 Development Trend of LED Encapsulation Form
	References
10 Reliability Analysis of Group III Nitride LEDs Devices
	10.1 Failure Mode and Failure Analysis
		10.1.1 Light Decay
		10.1.2 Sudden Failure
		10.1.3 Packaging
	10.2 The LED Aging Test and an Aging Mechanism
		10.2.1 Aging Experiment and Acceleration Factor
		10.2.2 Temperature Acceleration Test.
		10.2.3 Accelerated Electrical Stress Test
		10.2.4 Other Factors Affecting the Lifetime
	10.3 LED System Reliability
		10.3.1 LED System Reliability
		10.3.2 The Cases of Reliability Analysis in the LED Lighting System
	References
11 Applications of LEDs
	11.1 New Light Environment Technology
		11.1.1 LED Lighting Technology Background
		11.1.2 Basic Principles of LED Lighting
		11.1.3 Lighting and Display and Construction of Fusion
		11.1.4 Lighting and Outlook
	11.2 Visible Light Communication Application System
	11.3 LED Display
		11.3.1 LED Display Overview
		11.3.2 Outdoor LED Display
		11.3.3 Small Pitch Display and Indoor Applications
		11.3.4 Wide Color Gamut LED Back Light Technology
	11.4 LED for Plant Breeding
		11.4.1 Overview
		11.4.2 Alternative Plant Lighting
		11.4.3 Lighting Design Features
		11.4.4 Systematic Design Trend
	11.5 Medical Applications
		11.5.1 Treatment of Neonatal Jaundice
		11.5.2 Treatment of Hemorrhoids
		11.5.3 Treatment of Wound Healing
		11.5.4 Treatment of Oral Ulcer Inflammation
		11.5.5 Treatment of Joint Pain
		11.5.6 Application in Medical Beauty
	References
12 Novel Nitride LED Technology
	12.1 GaN-Based Nanorod LED
		12.1.1 Advantages of Nanorod LEDs
		12.1.2 Preparation Method of Nanorod LED
		12.1.3 Application of Nanorod LED
	12.2 Quantum Dot LED
		12.2.1 Preparation Method of Quantum Dots
		12.2.2 Optical Properties of Quantum Dots
		12.2.3 Advantages and Research Status of Quantum Dot Light-Emitting Diodes
	12.3 Surface Plasmon Enhanced GaN-Based LED
		12.3.1 Basic Properties of Surface Plasmons
		12.3.2 Principles of SP Coupling Enhanced LED
		12.3.3 Coupling Methods for SP Coupling Enhanced GaN-Based LED
		12.3.4 Surface Plasmon Application in Improving LED’s Modulation Bandwidth
	12.4 GaN-Based Polarizing LEDs
		12.4.1 Secondary Optical Design
		12.4.2 The LEDs Plus Metal Grating
		12.4.3 Nonpolar LEDs
		12.4.4 The Edge-Emitting Polarized LEDs
		12.4.5 Surface Plasmon Coupled Polarized LEDs
	References