III-Nitride Semiconductor Optoelectronics

Content: 
Series PagePage ii
CopyrightPage iv
ContributorsPages ix-xi
PrefacePages xiii-xivZetian Mi, Chennupati Jagadish
Chapter One - Materials Challenges of AlGaN-Based UV Optoelectronic DevicesPages 3-44M.H. Crawford
Chapter Two - Development of Deep UV LEDs and Current Problems in Material and Device TechnologyPages 45-83M. Shatalov, R. Jain, T. Saxena, A. Dobrinsky, M. Shur
Chapter Three - Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting DiodesPages 85-120H. Hirayama
Chapter Four - III-N Wide Bandgap Deep-Ultraviolet Lasers and PhotodetectorsPages 121-166T. Detchprohm, X. Li, S.-C. Shen, P.D. Yoder, R.D. Dupuis
Chapter Five - Al(Ga)N Nanowire Deep Ultraviolet OptoelectronicsPages 167-199S. Zhao, Z. Mi
Chapter Six - Growth and Structural Characterization of Self-Nucleated III-Nitride NanowiresPages 203-229T. Auzelle, B. Daudin
Chapter Seven - Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam EpitaxyPages 231-266S. Albert, A.M. Bengoechea-Encabo, M.Á. Sánchez-García, E. Calleja
Chapter Eight - InN Nanowires: Epitaxial Growth, Characterization, and Device ApplicationsPages 267-304S. Zhao, Z. Mi
Chapter Nine - Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N SystemPages 305-340K. Kusakabe, A. Yoshikawa
Chapter Ten - Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light ApplicationsPages 341-384S. Gwo, Y.J. Lu, H.W. Lin, C.T. Kuo, C.L. Wu, M.Y. Lu, L.J. Chen
Chapter Eleven - III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) SiliconPages 385-409P. Bhattacharya, A. Hazari, S. Jahangir, W. Guo, T. Frost
Chapter Twelve - Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Heterointegrated on SiliconPages 411-435C. Bayram, R. Liu
IndexPages 437-446
Contents of Volumes in this SeriesPages 447-474