Hydraulic Gates and Valves in Free Surface Flow and Submerged Outlets

Chalcogenide......Page 2
Copyright......Page 4
Contents......Page 5
List of contributors......Page 10
 1.1 Introduction......Page 12
  1.2.1 Monocrystalline CdTe solar cells......Page 13
  1.2.2 II-VI magnetic semiconductors......Page 14
  1.2.3 Electronic and optical effects in II1-xMnxVI alloys......Page 15
  1.2.4 Miscellaneous II-VI-based diluted magnetic semiconductors......Page 16
   1.2.4.2 Cr-based DMS alloys......Page 17
  1.2.5 Chalcogenide lead salts......Page 18
   1.3.1.2 Magnetic properties of epitaxial chalcogenides......Page 20
   1.3.1.4 Tunable Dirac interface states in topological superlattices......Page 22
   1.3.2.1 Topological insulators......Page 23
   1.3.2.2 Topological insulators and magnetism......Page 25
   1.3.3.1 2D electron gas in chalcogenide multilayers......Page 26
   1.3.3.2 Magnetic proximity effects at interfaces......Page 29
  1.4.1 One-dimensional and quasi-one-dimensional chalcogenides......Page 30
  1.4.2 Zero-dimensional chalcogenide structures......Page 31
 1.5 Concluding remarks......Page 33
 References......Page 34
 2.1 Introduction......Page 42
  2.1.2 Thermoelectric efficiency......Page 43
  2.2.1 Bottom-up and top-down fabrication......Page 45
  2.2.2 Consolidation method......Page 46
  2.2.3 Introducing nanostructures......Page 47
  2.2.4 Introducing nanoprecipitates......Page 48
  2.3.1 Normal doping......Page 49
  2.3.3 Introducing element deficiency......Page 51
  2.3.4 Other approaches......Page 52
 2.4 Band structure engineering......Page 54
  2.5.1 Original complex structure......Page 55
  2.5.2 Peierls distortion structure......Page 56
  2.5.3 Layered structure......Page 57
  2.5.4 Increase the degree of orientation......Page 59
 2.6 Outlook......Page 60
 References......Page 62
 3.2 Background......Page 68
 3.3 Lead salt detector fabrication......Page 70
 3.4 Lead salt detector characterization......Page 71
 References......Page 75
  4.1.1 The classical picture of dispersion......Page 77
  4.1.2 Electronic band structure and dispersion......Page 79
  4.1.3 The phenomenological dispersion model......Page 81
 4.2 Optical dispersion......Page 82
  4.2.1 Determination of the energy gap Eg(x)......Page 83
  4.2.2 Indices of refraction n(x)......Page 86
  4.3.1 Semi-empirical model......Page 93
  4.3.2 Improvements of SEO model......Page 95
  4.3.3 Comparison between various semi-empirical fits for ZnTe......Page 98
  4.4.1 Experimental results for ternary II-VI alloys......Page 101
  4.4.2 Summary......Page 105
  4.5.1 Physical meaning of fitting parameters......Page 109
  4.5.2 Optical dispersion and ionicity......Page 115
 References......Page 117
 Appendix......Page 119
 5.1 Introduction......Page 128
 5.2 Crystal lattice and band structure calculations......Page 129
 5.3 Electronic band structure......Page 132
 5.4 Electronic and optical properties......Page 135
 5.5 Nonlinear optical properties......Page 140
 5.6 Fabrication: single crystal growth and exfoliation; CVD, growth of 2D nanostructures......Page 146
 References......Page 149
 Further reading......Page 159
 6.1 Introduction......Page 161
  6.2.1 Band structure and exciton......Page 163
  6.2.2 Exciton transitions in the absence of magnetic field......Page 165
 6.3 Landau level transitions and magneto-polaron effect......Page 166
 6.4 Composition modulated ZnSeTe sinusoidal superlattice......Page 169
  6.4.1 Band structure of superlattice with sinusoidal energy profile......Page 170
  6.4.2 Growth of ZnSeTe superlattices with sinusoidal composition modulation......Page 171
  6.4.3 Optical transitions in ZnSeTe sinusoidal superlattices......Page 173
 6.5 II-VI-based zero-dimensional structures......Page 174
  6.5.1 Spin polarization and relaxation of exciton in QDs......Page 175
  6.5.2 Spin-spin interaction between the coupled QDs......Page 179
  6.6.1 Zeeman splitting in II1-xMnxVI DMS epilayers......Page 181
  6.6.2 Mapping of exciton localization in QDs......Page 182
 6.7 Enhancement of spin polarization in non-DMS and DMS coupled QDs......Page 186
 6.8 Summary......Page 189
 References......Page 190
 7.1 Introduction......Page 196
  7.2.1 2DEG in low-dimensional heterostructures......Page 197
  7.2.2 Spin interactions in chalcogenide DMS QWs......Page 200
   7.2.3.1 Low-field magnetotransport in DMS QWs......Page 202
   7.2.3.2 Quantum Hall effect in 2D systems......Page 204
   7.2.3.3 Modification of Shubnikov-de Haas oscillations......Page 207
   7.2.3.4 Quantum Hall ferromagnetic transition......Page 209
   7.2.3.5 Fractional quantum Hall effect in DMS QWs......Page 211
   7.2.3.6 Magnetotransport in wide HgTe QWs......Page 212
  7.2.4 DMS QW in inhomogeneous magnetic fields......Page 213
   7.2.5.1 Radiation induced spin currents......Page 216
   7.2.5.2 Magnetic quantum ratchet effects......Page 217
 7.3 Novel topological phases in chalcogenide multilayers......Page 218
  7.3.1 Domain walls and non-Abelian excitations......Page 219
  7.3.3 Quantum spin Hall effect in HgTe QWs......Page 224
  7.3.4 Quantum anomalous Hall effect in HgTe QWs......Page 226
 7.4 Summary and perspectives......Page 227
 References......Page 228
  8.1.1 Motivation......Page 242
  8.2.1 Advantages of MBE growth of 2D materials......Page 244
   8.2.2.1 Tin selenide......Page 249
   8.2.2.2 Molybdenum telluride......Page 251
   8.2.2.3 Molybdenum selenide......Page 252
   8.2.2.4 Layered heterostructures and superlattices......Page 254
  8.2.3 Cross between 2D and 3D structures......Page 256
  8.2.4 Challenges......Page 259
   8.3.1.1 Scanning tunneling microscopy......Page 260
   8.3.2.1 Molybdenum selenide......Page 262
   8.3.3.1 Photoluminescence and absorption spectroscopy......Page 264
   8.3.3.2 X-ray photoemission spectroscopy......Page 265
 8.4 Concluding remarks......Page 268
 References......Page 269
 9.1 Introduction......Page 277
  9.1.1 Theoretical background......Page 278
  9.2.1 Giant magneto-optical response in Mn2+-doped CdSe nanoribbons......Page 281
  9.2.2 Tuning magnetic exchange interactions by wavefunction engineering in core/shell nanoplatelets......Page 285
  9.3.1 Valence-band mixing in doped nanocrystal quantum dots......Page 288
  9.3.2 Going to the limit: individual dopants in single nanocrystals quantum dots......Page 291
  9.4.1 Smallest doped semiconductors......Page 295
  9.4.2 Doped magic-sized alloy nanoclusters......Page 296
  9.4.3 “Digital” doping in nanoclusters......Page 298
 9.5 Conclusion and future trends......Page 300
 Acknowledgments......Page 301
 References......Page 302
 10.1 Introduction......Page 311
  10.1.1 The Z2 Topological insulator......Page 312
  10.1.2 Mercury telluride quantum wells......Page 313
  10.1.3 V2VI3-series 3D topological insulators......Page 315
  10.2.1 Mercury telluride quantum well growth......Page 318
   10.2.1.2 CVD growth of HgTe quantum wells......Page 319
  10.2.2 V2VI3-series 3D topological insulators......Page 320
   10.2.2.2 Bulk crystal growth of V2VI3-series 3D topological insulators......Page 321
   10.2.2.3 V2VI3-series 3D topological insulator thin films grown by molecular beam epitaxy......Page 322
  10.3.1 Spectroscopy......Page 324
  10.3.2 Electrical transport......Page 327
   10.3.3.1 Quantum anomalous Hall effect......Page 329
   10.3.3.2 Topological superconductors......Page 331
 10.4 Summary and outlook......Page 333
 References......Page 335
 Further reading......Page 342
   11.1.1.2 Phonon dispersion......Page 344
   11.1.1.6 Phonon Boltzmann transport equation (BTE)......Page 345
   11.1.2.1 The chemical composition of chalcogenides......Page 347
  11.2.1 Dimensional effect......Page 348
  11.2.2 Length dependence......Page 351
  11.2.3 Single-layer sheet......Page 353
  11.2.4 Discussion on the overall trend from single-layer to bulk......Page 356
  11.3.1 Strain effect......Page 357
  11.3.2 Effect of atomic disorder and defect......Page 360
  11.3.3 Anisotropy......Page 363
  11.4.1 Resonant bonding......Page 365
  11.4.2 Lone pair electron......Page 366
  11.4.3 Rattling modes......Page 368
 References......Page 369
Index......Page 376