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دانلود کتاب Hot Carriers in Semiconductors. Proceedings of the Fifth International Conference, 20–24 July 1987, Boston, MA, U.S.A.

دانلود کتاب حامل های داغ در نیمه هادی ها. مجموعه مقالات پنجمین کنفرانس بین المللی، 20-24 ژوئیه 1987، بوستون، MA، U.S.A.

Hot Carriers in Semiconductors. Proceedings of the Fifth International Conference, 20–24 July 1987, Boston, MA, U.S.A.

مشخصات کتاب

Hot Carriers in Semiconductors. Proceedings of the Fifth International Conference, 20–24 July 1987, Boston, MA, U.S.A.

ویرایش: 1st 
نویسندگان:   
سری:  
ISBN (شابک) : 9780080362373 
ناشر: Pergamon 
سال نشر: 1988 
تعداد صفحات: 482 
زبان: English 
فرمت فایل : PDF (درصورت درخواست کاربر به PDF، EPUB یا AZW3 تبدیل می شود) 
حجم فایل: 21 مگابایت 

قیمت کتاب (تومان) : 38,000



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در صورت تبدیل فایل کتاب Hot Carriers in Semiconductors. Proceedings of the Fifth International Conference, 20–24 July 1987, Boston, MA, U.S.A. به فرمت های PDF، EPUB، AZW3، MOBI و یا DJVU می توانید به پشتیبان اطلاع دهید تا فایل مورد نظر را تبدیل نمایند.

توجه داشته باشید کتاب حامل های داغ در نیمه هادی ها. مجموعه مقالات پنجمین کنفرانس بین المللی، 20-24 ژوئیه 1987، بوستون، MA، U.S.A. نسخه زبان اصلی می باشد و کتاب ترجمه شده به فارسی نمی باشد. وبسایت اینترنشنال لایبرری ارائه دهنده کتاب های زبان اصلی می باشد و هیچ گونه کتاب ترجمه شده یا نوشته شده به فارسی را ارائه نمی دهد.


توضیحاتی در مورد کتاب حامل های داغ در نیمه هادی ها. مجموعه مقالات پنجمین کنفرانس بین المللی، 20-24 ژوئیه 1987، بوستون، MA، U.S.A.

گزارشی جامع از آخرین پیشرفت ها در حوزه به سرعت در حال گسترش فناوری نیمه هادی. موضوعات اصلی پوشش داده شده شامل انتقال فضای واقعی/ناهم ساختارها، مطالعات فوق سریع، مطالعات نوری، تئوری حمل و نقل، دستگاه ها، حمل و نقل بالستیک، فرآیندهای پراکندگی و فونون های داغ، تونل زنی، مطالعات میدان مغناطیسی و فروسرخ دور و یونیزاسیون ضربه/نویز/آشوب است. جنبه های دیگر عبارتند از استفاده از لیزر فمتوثانیه در بررسی اثرات حامل داغ گذرا در مقیاس های زمانی فمتوثانیه، انتقال مغناطیسی و برهمکنش های حامل- حامل.


توضیحاتی درمورد کتاب به خارجی

A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions



فهرست مطالب

Content: 
Front Matter, Page i
Copyright, Page ii
FOREWORD, Page ix, Jagdeep Shah, G.J. Iafrate
ORGANIZING COMMITTEE, Page xi
Inside Front Cover, Page xiii
OPENING ADDRESS, Page xv, Jagdeep Shah
REAL SPACE TRANSFER: GENERALIZED APPROACH TO TRANSPORT IN CONFINED GEOMETRIES, Pages 319-324, K. Hess
REAL SPACE HOT ELECTRON DISTRIBUTIONS AND TRANSFER EFFECTS IN HETEROSTRUCTURES, Pages 325-328, Y. Cho, R. Sakamoto, M. Inoue
MICROSCOPIC HIGH FIELD TRANSPORT IN GRADED HETEROSTRUCTURES, Pages 329-332, A. AI-Omar, J.P. Krusius
MONTE-CARLO STUDY OF THE DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR, Pages 333-336, J-L. Pelouard, P. Hesto, R. Castagné
ELECTRON VELOCITY AT HIGH ELECTRIC FIELDS IN AlGaAs/GaAs MODULATION-DOPED HETEROSTRUCTURES, Pages 337-340, W.T. Masselink, N. Braslau, D. LaTulipe, W.I. Wangt, S.L. Wright
Hot Carrier Trapping in GaAs/AlGaAs Single Quantum Wells With Different Confinement Structures, Pages 341-344, H.-J. POLLAND, K. LEO, K. PLOOG, J. FELDMANN, G. PETER, E.O. GÖBEL, K. FUJIWARA, T. NAKAYAMA
COLLECTIVE ELECTRON INTERACTION IN DOUBLE-BARRIER GaAs TRANSISTORS, Pages 345-347, V. Gružinskis, S. Keršulis, R. Mickevičius, J. Požela, A. Reklaitis
SIMULATIONS OF NONLINEAR TRANSPORT IN AlGaAs/GaAs SINGLE WELL HETEROSTRUCTURES, Pages 349-350, K. Kim, K. Hess, F. Capasso
REAL SPACE TRANSFER OF TWO DIMENSIONAL ELECTRONS IN DOUBLE QUANTUM WELL STRUCTURES, Pages 351-354, N. Sawaki, M. Suzuki, E. Okuno, H. Goto, I. Akasaki, H. Kano, Y. Tanaka, M. Hashimoto
Ensemble Monte Carlo Simulation of Real Space Transfer (NERFET/CHINT) Devices, Pages 355-357, Isik. C. Kizilyalli, K. Hess, T. Higman, M. Emanuel, J.J. Coleman
Effect of Continuum Resonances on Hot Carrier Transport in Quantum Wells, Pages 359-362, Wolfgang Porod, Craig S. Lent
ON THE ANALYTICAL APPROACH TO THE REAL SPACE ELECTRON TRANSFER IN GaAs-AlGaAs HETEROSTRUCTURES, Pages 363-366, Martin Moško, Ivo Nov´k, Pavol Quittner
DIFFUSION COEFFICIENTS OF TWO-DIMENSIONAL ELECTRON GAS IN HETEROJUNCTIONS, Pages 367-370, J. Zimmermann, Y. Wu
HOT ELECTRON DISTRIBUTION AND TRANSPORT IN AlGaAs/GaAs/AlGaAs QUANTUM WELLS, Pages 371-374, K. Makiyama, M. Inoue, M. Ashida, S. Sasa, S. Hiyamiz
REDUCED INTERVALLEY TRANSFER IN A GaAs-AlGaAs HETEROJUNCTION, Pages 375-377, K. Nederveen, T.G. van de Roer
ULTRAFAST S-TYPE NDC AND SELF-OSCILLATIONS UNDER VERTICAL TRANSPORT IN MULTILAYER HETEROSTRUCTURES, Pages 379-382, A.M. Belyantsev, V.I. Gavrilenko, A.A. Ignatov, V.I. Piskarev, V.I. Shashkin, A.A. Andronov
ELECTRON TRANSPORT IN GaAs/AlxGa1-xAs HETEROJUNCTIONS AT LOW TEMPERATURES, Pages 383-386, M. Artaki, K. Hess
MAGNETIC FIELD-DEPENDENT HOT CARRIER RELAXATION IN GaAs QUANTUM WELLS, Pages 387-390, A.J. Turberfield
WARM ELECTRON COEFFICIENT OF TWO DIMENSIONAL ELECTRON GAS IN A GaAs-AlGaAs HETEROJUNCTIONS AT LOW TEMPERATURES, Pages 391-394, P.K. Basu, Keya Bhattacharyya
FEMTOSECOND SPECTROSCOPY AND TRANSPORT, Pages 397-399, Charles V. Shank
ULTRAFAST RELAXATION OF HOT PHOTOEXCITED CARRIERS IN GaAs, Pages 401-406, D.K. Ferry, R. Joshi, M.-J. Kann, M.A. Osman
HEATING OF COLD ELECTRONS BY A WARM GaAs LATTICE: A NOVEL PROBE TO CARRIER-PHONON INTERACTION, Pages 407-412, W.W. Rühle, H.-J. Polland, E. Bauser, K. Ploog, C.W. Tu
INTERSUBBAND RELAXATION OF PHOTOEXCITED HOT CARRIERS IN QUANTUM WELLS, Pages 413-418, D.Y. Oberli, M.V. Klein, T. Henderson, D.R. Wake, H. Morkoç
Secondary Emission Studies of Hot Carrier Relaxation in Polar Semiconductors, Pages 419-424, J.A. Kash, J.C. Tsang
HIGH DENSITY FEMTOSECOND EXCITATION OF NONTHERMAL CARRIER DISTRIBUTIONS IN INTRINSIC AND MODULATION DOPED GaAs QUANTUM WELLS, Pages 425-430, Wayne H. Knox, Daniel S. Chemla, Gabriela Livescu
HOT CARRIER ENERGY LOSS RATES IN GalnAs/InP QUANTUM WELLS, Pages 431-434, D.J. Westland, J.F. Ryan, M.D. Scott, J.I. Davies, J.R. Riffat
INITIAL RELAXATION OF PHOTOEXCITED CARRIERS IN GaAs AND GaAs QUANTUM WELLS UNDER SUBPICOSECOND EXCITATION, Pages 435-438, Benoit Deveaud, Jagdeep Shah, T.C. Damen, A.C. Gossardt, P. Lugli
FEMTOSECOND RELAXATION DYNAMICS OF NONEQUILIBRIUM CARRIERS IN GaAs AND RELATED COMPOUNDS, Pages 439-442, C.L. Tang, F.W. Wise, I.A. Walmsley
FEMTOSECOND HOT CARRIER ENERGY REDISTRIBUTION IN GaAs AND AlGaAs, Pages 443-446, R.W. Schoenlein, W.Z. Lin, S.D. Brorson, E.P. Ippen, J.G. Fujimoto
HOT CARRIER RELAXATION IN HIGHLY EXCITED III-V COMPOUNDS, Pages 447-450, H. Kurz, W. Kuett, K. Seibert, M. Strähnen
Nonequilibrium Phonon Effects on the Time-Dependent Relaxation of Hot Carriers in GaAs MQW, Pages 451-454, Kai Shum, M.R. Junnarkar, H.S. Chao, R.R. Alfano, H. Morkoc
PICOSECOND RAMAN SCATTERING FROM NON-EQUILIBRIUM LO AND TO PHONONS IN GERMANIUM, Pages 455-458, J.F. Young, K. Wan, H.M. van Driel
ENERGY RELAXATION IN p- AND n-GaAs QUANTUM WELLS: CONFINEMENT EFFECTS, Pages 459-462, M. Tatham, R.A. Taylor, J.F. Ryan, W.I. Wang, C.T. Foxon
ELECTRON-ELECTRON SCATTERING DURING FEMTOSECOND PHOTOEXCITATION IN QUANTUM WELLS, Pages 463-466, S.M. Goodnick, P. Lugli
ENSEMBLE MONTE CARLO SIMULATIONS OF FEMTOSECOND ENERGY RELAXATION OF PHOTOEXCITED ELECTRONS IN BULK GaAs, Pages 467-470, D.W. Bailey, C.J. Stanton, K. Hess, M.A. Artaki, F.W. Wise, C.L. Tang
CARRIER-CARRIER INTERACTION AND INTERVALLEY TRANSFER EFFECTS ON THE ULTRAFAST RELAXATION OF PHOTOEXCITED ELECTRONS IN GaAs, Pages 471-474, M.A. Osman, H.L. Grubin
HOLE-ACOUSTIC PHONON ENERGY LOSS RATES IN GaAs QUANTUM WELLS DETERMINED BY LIGHT SCATTERING, Pages 477-479, A. Pinczuk, A.C. Gossard, Jagdeep Shah
HOT CARRIER RELAXATION PHENOMENA DETECTED BY OPTICALLY INDUCED MAGNETIZATION, Pages 481-484, H. Krenn, K. Kaltenegger, G. Bauer
HIGH RESOLUTION STUDIES OF 2 D PLASMA TRANSPORT IN GaAs/GaAlAs QUANTUM WELLS, Pages 485-488, H. Hillmer, A. Forchel, S. Hansmann, E. Lopez, G. Weimann
ENERGY AND SPIN POLARIZATION ANALYSIS OF NEAR BAND GAP PHOTOEMISSION IN AlGaAs/GaAs HETEROSTRUCTURES, Pages 489-492, F. Ciccacci, H.-J. Drouhin, C. Hermann, R. Houdré, G. Lampel, F. Alexandre
LASER INDUCED COOLING OF HOT ELECTRONS IN n-InSb BY FREE CARRIER ASSISTED TRANSITIONS, Pages 493-496, L.K. Hanes, D.G. Seiler
TRANSPORT IN PHOTOEXCITED HOT CARRIERS SYSTEMS, Pages 497-499, V.N. Freire, A.R. Vasconeellos, R. Luzzi
HOT ELECTRON ENERGY RELAXATION VIA A COUSTIC PHONON EMISSION IN InP/ln0.53 Ga0.47As HETEROSTRUCTURES AND SINGLE QUANTUM WELLS, Pages 501-505, M.J. Barlow, B.K. Ridley, M.J. Kane, S.J. Bass
HOT CARRIER RELAXATION AND RECOMBINATION IN GaSb/AlSb QUANTUM WELLS, Pages 507-510, U. Cebulla, S. Zollner, A. Forchel, S. Subbanna, H. Kroemer, G. Griffiths
NONLINEAR MODULATION OF HOT CARRIER MOBILITY AND OPTICAL ABSORPTION IN PHOTOEXCITED POLAR SEMICONDUCTORS, Pages 511-514, M.A. Rodriguez, J.L. Carrillo
QUANTUM TRANSPORT AND SOLID-STATE DYNAMICS FOR BLOCH ELECTRONS IN AN ELECTRIC FIELD, Pages 517-521, Gerald J. Iafrate, Joseph B. Krieger
A NEW MONTE CARLO TECHNIQUE FOR THE SOLUTION OF THE BOLTZMANN TRANSPORT EQUATION, Pages 523-526, C. Jacoboni, P. Poli, L. Rota
ANALYSIS OF QUANTUM FEATURES IN TRANSPORT THEORY FROM A QUANTUM MONTE CARLO APPROACH, Pages 527-530, Rossella Brunetti, Carlo Jacoboni
NONEQUILIBRIUM PHONON EFFECTS ON HOT CARRIER TRANSPORT AND THERMAL NOISE IN SEMICONDUCTOR HETEROSTRUCTURES, Pages 531-534, X.L. Lei, N.J.M. Horing
QUANTUM CORRECTIONS TO THE MONTE CARLO SOLUTION OF HOT-ELECTRON TRANSPORT IN SEMICONDUCTORS, Pages 535-538, Antti-Pekka Jauho, Lino Reggiani
NONLINEAR ENERGY RELAXATION OSCILLATIONS AND CHAOTIC DYNAMICS OF HOT CARRIERS, Pages 539-542, Eckehard Schöll
GENERATION-RECOMBINATION NOISE OF HOT CARRIERS IN SEMICONDUCTORS, Pages 543-546, Lino Reggiani, Paolo Lugli, Vladimir Mitin
A NEW MONTE CARLO SIMULATION OF HOT ELECTRON TRANSPORT WITH ELECTRON-ELECTRON SCATTERING, Pages 547-550, A. Hasegawa, K. Miyatsuji, K. Taniguchi, C. Hamaguchi
BALANCE EQUATION APPROACH TO HOT ELECTRON TRANSPORT IN MANY-VALLEY SEMICONDUCTORS: COMPARING WITH THE MONTE CARLO RESULTS FOR n-TYPE Si, Pages 551-554, C.S. Ting, M. Liu, D.Y. Xing
BALLISTIC ELECTRON TRANSPORT IN GaAs/AlGaAs TUNNELING JUNCTIONS WITH OPTICAL PHONON EMISSION, Pages 555-558, P. Hu, C.S. Ting
A GENERALIZATION OF KUBO FORMALISM FOR HOT-ELECTRON TRANSPORT, Pages 559-562, Jean Jacques Niez, Paolo Lugli, Lino Reggiani
FEYNMAN PATH INTEGRAL STUDY OF CONFINED CARRIERS SUBJECT TO A STATISTICAL POTENTIAL, Pages 563-566, L.F. Register, M.A. Littlejohn, M.A. Stroscio
TRANSPORT CORRELATION COEFFICIENTS AND PHOTOCONDUCTIVE SWITCHING, Pages 567-570, Robert O. Grondin, Meng J. Kann
HYDRODYNAMI CHOT-ELECTRON TRANSPORT MODEL WITH MONTE CARLO-GENERATED TRANSPORT PARAMETERS, Pages 571-574, D.L. Woolard, R.J. Trew, M.A. Littlejohn
RESONANT-TUNNELING HOT ELECTRON TRANSISTOR (RHET), Pages 577-582, N. Yokoyama, K. Imamura, H. Ohnishi, T. Mori, S. Muto, A. Shibatomi
High Field Hot Electron Transport through AlxGa1-xAs Multiquantum Well Superlattices, Pages 583-587, B.F. Levine, K.K. Choi, C.G. Bethea, J. Walker, R.J. Malik
THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE HETEROSTRUCTURE HOT ELECTRON DIODE, Pages 589-592, M.A. Emanuel, T.K. Higman, J.M. Higman, J.M. Kolodzey, J.J. Coleman, K. Hess
THE EFFECT OF REFLECTING CONTACTS ON HIGH FIELD TRANSPORT, Pages 593-594, D. Arnold, K. Hess
THE SUBMICRON INVERTED MODFET l-GaAs/N+ -AlGaAs: A 2D MONTE-CARLO STUDY, Pages 595-598, R. Fauquembergue, J.L. Thobef, P. Descheerder, M. Pemisek, P. Wolf
THE INFLUENCE OF CATHODE CONTACTS ON NEAR-MICRON InP TRANSFERRED ELECTRON DEVICES, Pages 599-602, J. Czekaj, M.P. Shaw
EXTREMELY ENHANCED I-V COLLAPSE OF n+-AlxGa1-xAs / GaAs MODFET WITH AlAs MOLE FRACTION x HIGHER THAN 0.4, Pages 603-606, T. Kobayashi, N. Okisu, T. Takahashi, Y. Yoshizako, T. Tomita, T. Yamashita, T. Sakurai
DOUBLE RIDLEY-WATKINS-HILSUM-GUNN EFFECT IN COMPENSATED GaAs, Pages 607-610, Jingming. Xu, Michael Shur
THE USE OF LINEARLY GRADED COMPOSITION AlGaAs INJECTORS FOR INTERVALLEY TRANSFER IN GaAs: THEORY AND EXPERIMENT, Pages 613-616, N.R. Couch, P.H. Beton, M.J. Kelly, T.M. Kerr, D.J. Knight, J. Ondria
Ballistic Transport, Pages 617-618, M. Heiblum
Hot Electron Dynamics in Device Structures, Pages 619-623, J.R. Hayes
ROOM TEMPERATURE OPERATION OF UNIPOLAR HOT ELECTRON TRANSISTORS, Pages 625-628, A.F.J. Levi, T.H. Chiu
HOT ELECTRONS IN SiO2: BALLISTIC TO STEADY-STATE TRANSPORT, Pages 629-636, M.V. Fischetti, D.J. DiMaria
MONTE-CARLO SIMULATION OF HOT ELECTRON SPECTRA, Pages 637-640, P.H. Beton, A.P. Long, M.J. Kelly
ELECTRON-HOLE DRAG IN SEMICONDUCTORS, Pages 643-648, R.A. Höpfel, J. Shah
INTERACTION BETWEEN LAYERS BY ELECTRON-ELECTRON SCATTERING, Pages 649-652, Carlo Jacoboni, Peter J. Price
MONTE CARLO INVESTIGATION OF MINORITY ELECTRON TRANSPORT IN In0.53Ga0.47As, Pages 653-656, M.A. Osman, H.L. Grubin
SCATTERING PROCESSES IN SEMICONDUCTORS, Pages 657-661, Monique Combescot
THE EFFECTS OF BAND STRUCTURE ON ELECTRON-HOLE COULOMB SCATTERING, Pages 663-666, J.F. Young, P.J. Kelly, N.L. Henry
HOT PHONON DYNAMICS, Pages 667-672, Paolo Lugli
HOT PHONONS IN GaAs REVISITED, Pages 673-676, W. Pötz, M.A. Osman, D.K. Ferry
NONEQUILIBRIUM CARRIER-PHONON COUPLING IN A SEMICONDUCTOR QUANTUM WELL, Pages 677-681, M.C. Marchetti, W. Cai, M. Lax
THE EFFECT OF HOT PHONONS AND COUPLED PHONON-PLASMON MODES ON SCATTERING-INDUCED NDR IN QUANTUM WELLS, Pages 683-685, B.K. Ridley, M. Al-Mudares
TRANSIENT HOT-PHONON EFFECTS ON THE VELOCITY OVERSHOOT OF GAAS: A MONTE CARLO ANALYSIS, Pages 687-690, M. RIEGEL, P. KOCEVAR, P. BORDONE, P. LUGLI, L. REGGIANI
INVERTED POPULATIONS OF HOT ELECTRONS IN A MAGNETIC FIELD: THE EFFECTS OF ELECTRON-ELECTRON AND IMPURITY SCATTERING IN n-GaAs, Pages 691-694, F. Abou El-Ela, B.K. Ridley
HOT ELECTRON RELAXATION IN POLAR SEMICONDUCTORS, Pages 695-700, S. Das Sarma, J.K. Jain, R. Jalabert
ELECTRON GAS HEATING AND COOLING EFFECTS BY MICROWAVE ELECTRIC FIELDS IN COMPENSATED InSb, Pages 701-703, S. Ašmontas, J. Požela, L. Subačius, G. Valušis
MAGNETIC FIELD STUDIES OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN DOUBLE BARRIER RESONANT TUNNELLING STRUCTURES BASED ON n-InP/(InGa)As, Pages 707-710, M.L. Leadbeater, L. Eaves, P.E. Simmonds, G.A. Toombs, F.W. Sheard, P.A. Claxton, G. Hill, M.A. Pate
ELECTRON TUNNELLING INTO INTERFACIAL LANDAU STATES IN SINGLE BARRIER N-TYPE (InGa)As/InP/(InGa)As HETEROSTRUCTURES, Pages 711-716, K.S. Chan, L. Eaves, D.K. Maude, F.W. Sheard, B.R. Snell, G.A. Toombs, E.S. Alves, J.C. Portal, S. Bass
ELECTRON TUNNELING FROM DONORS AND EXCITONS, Pages 717-722, A. Dargys, A. Matulionis
Resonant Tunneling through Quantum Wells: Physics and Device Applications, Pages 723-729, F. Capasso, S. Sen, A.Y. Cho, A.C. Gossard, R.J. Spah
Breakdown of Coherence in Resonant Tunneling Through Double-Barrier Heterostructures, Pages 731-734, V.J. Goldman, D.C. Tsui, J.E. Cunningham
Tunneling Studies of the Miniband Structure of a Superlattice, Pages 735-737, P. England, J.R. Hayes, J.P. Harbison, D.M. Hwang
QUANTUM TRANSPORT MODELING OF RESONANT-TUNNELING DEVICES, Pages 739-742, William R. Frensley
QUANTUM TUNNELING PROPERTIES FROM A WIGNER FUNCTION STUDY, Pages 743-746, N.C. Kluksdahl, A.M. Kriman, C. Ringhofer, D.K. Ferry
TUNNELING TIMES FOR WAVE PACKETS NARROW IN WAVE-NUMBER SPACE, Pages 747-748, E.H. Hauge, J.P. Falck, T.A. Fjeldly
ANALYSIS OF CARRIER DISTRIBUTION FUNCTION THROUGH SMITH-PURCELL EFFECT IN GaAs/GaAlAs HETEROSTRUCTURES, Pages 751-754, E. Gornik, R. Christanell, R. Lassnig, W. Beinstingl, K. Berthold, G. Weimann
FAR IR LUMINESCENCE OF HOT HOLES IN Ge: DIAGNOSTICS OF INTERSUBBAND POPULATION INVERSION AND EFFECTS OF UNIAXIAL STRESS, Pages 755-758, V.L. GAVRILENKO, A.L. KOROTKOV, Z.F. KRASYL'NIK, V.V. NIKONOROV, S.A. PAVLOV
NEW RESULTS ON STIMULATED EMISSION FROM p-GERMANIUM IN CROSSED FIELDS, Pages 759-762, M. Helm, K. Unterrainer, E. Gornik, E.E. Haller
INVESTIGATIONS OF RECOMBINATION MECHANISMS IN THE PULSED FAR INFRA RED PHOTORESPONSE OF n-InP, Pages 763-766, G.L.J.A. Rikken, P. Wyder, J.M. Chamberlain, D.P. Halliday, R.T. Grimes
DIRECT OBSERVATION OF INTERSUBBAND RELAXATION IN NARROW MULTIPLE QUANTUM WELL STRUCTURES, Pages 767-770, A. Seilmeier, H.-J. Hübner, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp
NORMAL AND HOT ELECTRON MAGNETO-PHONON RESONANCE IN A GaAs-HETEROSTRUCTURE, Pages 771-775, P. Warmenbol, F.M. Peeters, J.T. Devreese
ELECTRIC FIELD-INDUCED MAGNETOPHONON RESONANCE, Pages 777-780, N. Mori, N. Nakamura, K. Taniguchi, C. Hamaguchi
MEASUREMENTS OF HOT ELECTRON MAGNETOPHONON RESONANCE IN GaAs/GaAlAs HETEROSTRUCTURES, Pages 781-784, D.R. Leadley, M.A. Brummell, R.J. Nicholas, J.J. Harris, C.T. Foxon
HOT ELECTRON TRANSPORT PARALLEL TO STRONG MAGNETIC FIELDS IN GALLIUM ARSENIDE, Pages 785-788, E.S. Hellman, J.S. Harris Jr.
IMPACT IONIZATION AND ELECTRIC FIELD QUENCHING OF PHOTOLUMINESCENCE IN SILICON, Pages 791-794, H. Weman, Q.X. Zhao, B . Monemar
IMPACT IONIZATION AND CHAOTIC STATES IN NARROW-GAP SEMICONDUCTORS UNDER A STRONG MAGNETIC FIELD, Pages 795-798, Yutaka Abe
HOT ELECTRON CAPTURE IN GaAs MQW: NDR AND PERSISTENT EFFECTS, Pages 799-803, N. Balkan, B.K. Ridley, J. Roberts
QUANTITATIVE CHARACTERIZATION OF CHAOTIC CURRENT OSCILLATIONS IN GaAs:Cr, Pages 805-808, J. Požela, A. Tamaševičius, J. Ulbikas
CHAOTIC CONDUCTIVITY OSCILLATION IN N-TYPE Si BY IMPACT-IONIZATION IN FREEZEOUT TEMPERATURE RANGE, Pages 809-812, K. YAMADA, N. TAKARA, H. IMADA, N. MIURA, C. HAMAGUCHI
LOW FREQUENCY AND CHAOTIC CURRENT OSCILLATIONS IN SEMIINSULATING GaAs, Pages 813-816, W. Knap, M. Ježewskl, J. Lusakowski, W. Kuszko
SPATIO-TEMPORAL INSTABILITIES IN THE ELECTRIC BREAKDOWN OF P-GERMANIUM, Pages 817-820, J. Peinke, J. Parisi, B. Röhricht, K.M. Mayer, U. Rau, R.P. Huebener
AUTHOR INDEX, Pages I-III
FIFTH INTERNATIONAL CONFERENCE ON HOT CARRIERS IN SEMICONDUCTORS, Pages V-XI




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