High-Speed Electronics: Basic Physical Phenomena and Device Principles

Front Matter....Pages I-X
Front Matter....Pages 1-1
Modelling of High Electron Velocity Effects for Devices....Pages 2-10
Ballistic Transport and Electron Spectroscopy in Tunnelling Hot Electron Transfer Amplifiers (THETA)....Pages 11-18
Hot Electron Transistors....Pages 19-23
Tunneling Through III–V Low-Barrier Heterostructures....Pages 24-27
Velocity Overshoot and Suppression of Diffusivity and Microwave Noise in Short n + -n-n + Structures of GaAs....Pages 28-31
Mobility Overshoot of Hot Electrons....Pages 32-34
Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT....Pages 35-39
Application of the Integral Boltzmann Equation to the Hot Electron Problem in an Inhomogeneous Submicron Structure....Pages 40-43
Three Picosecond Oscillations in Avalanche Electron-Hole Plasma Induced by Energy Relaxation Phenomena....Pages 44-47
Front Matter....Pages 49-49
Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche Photodiodes....Pages 50-61
Novel Real-Space Transfer Devices....Pages 62-71
Transport Characteristics in Heterostructure Devices....Pages 72-78
Technical Issues of High-Speed Heterostructure Devices....Pages 79-87
Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AlGaAs/GaAs Heterointerface Under High Electric Field Application....Pages 88-92
Optical High-Field-Transport Experiments in GaAs Quantum Wells....Pages 93-96
Optical Time-of-Flight Investigation in Ambipolar Carrier Transport in Specially Designed GaAs/GaAlAs Quantum Well Structures....Pages 97-100
An Ultra-Fast Optical Modulator: The Double-Well GaAs/GaAlAs Superlattice (DWSL)....Pages 101-103
High-Velocity Vertical Transport in Graded Gap GaAs/GaAlAs Superlattices....Pages 104-107
Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing....Pages 108-111
Negative Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AlGaAs/GaAs/AlGaAs Heterostructure....Pages 112-115
Front Matter....Pages 49-49
Monte Carlo Study of Hot Electron Transport in GaAs-AlGaAs Quantum Wells....Pages 116-119
Front Matter....Pages 120-120
High-Speed Bulk Unipolar Structures in Silicon....Pages 121-122
Silicon Bulk Barrier Diodes Fabricated by LPVPE....Pages 123-126
Impact Ionization Breakdown of GaAs Current Limiters....Pages 127-131
The New High Speed Devices: The Barrier Transistor and the TEG-Base Transistor....Pages 132-135
Monte Carlo Investigation of the High Electron Mobility Transistor....Pages 136-139
Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs....Pages 140-143
Potential Barriers in Doped GaAs by OM-VPE....Pages 144-147
Low Noise High Electron Mobility Transistors Grown By MOVPE....Pages 148-150
Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison....Pages 151-155
Self-Aligned Technology Using Refractory Ohmic Contacts for GaAs/GaAlAs Heterojunction Bipolar Transistors....Pages 156-159
Novel Cryoelectronic Device Concept Based on Magnetically Controlled Current Flow in Bulk Semiconductors....Pages 160-163
InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation....Pages 164-167
Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors....Pages 168-171
Cryogenic GaAs Integrated Circuits Using a Lightly Doped GaAs FET Structure....Pages 172-176
GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs....Pages 177-181
Front Matter....Pages 183-183
Optoelectronic Generation of Very High Speed Electromagnetic Transients....Pages 184-190
Picosecond Electro-Optic Sampling....Pages 191-199
High-Speed Integrated Circuit Testing by Time-Resolved Photoemission....Pages 200-203
Overview of Optical Switching and Bistability....Pages 204-209
Front Matter....Pages 183-183
Monte Carlo Investigation of High-Speed GaAs Schottky Barrier Photodiode....Pages 210-213
A High-Speed Au/In 0.53 Ga 0.47 As/InP Schottky Barrier Photodiode for 1.3–1.65 µ m Photodetection....Pages 214-217
High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation....Pages 218-222
GaAs Photoconductors to Characterize Picosecond Response in GaAs Integrated Devices and Circuits....Pages 223-225
Characterization of On-Chip Polycrystalline Silicon Photoconductors....Pages 226-229
Back Matter....Pages 231-232