Growth of Crystals

Front Matter....Pages i-viii
Front Matter....Pages 1-1
Concentrational Instability of the Interface....Pages 3-13
Quantum-Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111) and Si(100) Surfaces....Pages 15-25
Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impurities....Pages 27-36
High-Resolution Transmission Electron Microscopic Study of Epitaxial Layers....Pages 37-49
Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy....Pages 51-66
Front Matter....Pages 67-67
Molecular-Beam Epitaxy of Silicon....Pages 69-76
Molecular Epitaxy of A 3 B 5 Compounds....Pages 77-86
Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te....Pages 87-97
 δ -Structures in Gallium Arsenide....Pages 99-103
Front Matter....Pages 105-105
Influence of Impurities on Growth Kinetics and Morphology of Prismatic Faces of ADP and KDP Crystals....Pages 107-119
Controlled Flux Growth of Complex Oxide Single Crystals....Pages 121-134
Mechanism of Relaxation of the Nonequilibrium Liquid—Solid Interface before Liquid-Phase Heteroepitaxy of III—V Compounds....Pages 135-146
Modelling and Control of Heat and Mass Transfer during Liquid Epitaxy....Pages 147-154
Front Matter....Pages 155-155
Aggregation of Point Defects in Silicon Crystals Growing from the Melt....Pages 157-167
Interaction of Crystals Growing in the Melt with Inclusions and Concentration Inhomogeneities....Pages 169-182
Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals....Pages 183-196
Multicomponent Fluoride Single Crystals (Current Status of Their Synthesis and Prospects)....Pages 197-211