Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Front Matter....Pages i-xi
Ultrathin Dielectrics in Silicon Microelectronics....Pages 1-24
Study of the Si/SiO 2 Interface Using Positrons:....Pages 25-38
Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation....Pages 39-48
Synchrotron and Conventional Photoemission Studies of Oxides and N 2 0 Oxynitrides....Pages 49-63
Stress in The SiO 2 /Si Structures Formed by Thermal Oxidation....Pages 65-78
Modelling the Oxide and the Oxidation Process....Pages 79-88
Core-Level Shifts in Si(001)-SiO 2 Systems: The Value of First-Principle Investigations....Pages 89-102
A Simple Model of the Chemical Nature of Bonds at the Si—SiO 2 Interface and its Influence on the Electronic Properties of MOS Devices....Pages 103-116
Chemical Perspectives on Growth and Properties of Ultrathin SiO 2 Layers....Pages 117-129
A theoretical model of the Si/SiO 2 interface....Pages 131-145
Spatially-Selective Incorporation of Bonded-Nitrogen into Ultra-Thin Gate Dielectrics by Low-Temperature Plasma-Assisted Processing....Pages 147-164
Isotopic Labeling Studies of Oxynitridation in Nitric Oxide (NO) of Si and SiO 2 ....Pages 165-179
Thermal Routes to Ultrathin Oxynitrides....Pages 181-190
Nitrogen in Ultra Thin Dielectrics....Pages 191-215
Endurance of EEPROM-Cells Using Ultrathin NO and NH 3 Nitrided Tunnel Oxides....Pages 217-226
Effects of the Surface Deposition of Nitrogen on the Oxidation of Silicon....Pages 227-240
Surface, Interface and Valence Band of Ultra-Thin Silicon Oxides....Pages 241-256
Low Temperature Ultrathin Dielectrics on Silicon and Silicon Carbide Surfaces: From the Atomic Scale to Interface Formation....Pages 257-276
Interaction of O 2 and N 2 O with Si During the Early Stages of Oxide Formation....Pages 277-287
Scanning Tunneling Microscopy on Oxide and Oxynitride Formation, Growth and Etching of Si Surfaces....Pages 289-307
The Interaction of Oxygen with Si(100) in the Vicinity of the Oxide Nucleation Threshold....Pages 309-314
Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides....Pages 315-324
Electrical Defects at the SiO 2 /Si Interface Studied by EPR....Pages 325-333
Towards an Atomic Scale Understanding of Defects and Traps in Oxide/Nitride/Oxide and Oxynitride Systems....Pages 335-342
A New Model of Photoelectric Phenomena in MOS Structures....Pages 343-357
Point Defect Generation During Si Oxidation and Oxynitridation....Pages 359-373
Optically Induced Switching in Bistable Structures: Heavily Doped n + - Polysilicon - Tunnel Oxide Layer - n - Silicon....Pages 375-382
Heterojunction Al/SiO 2 /n-Si Device as an Auger Transistor....Pages 383-390
Radiation Induced Behavior in MOS Devices....Pages 391-396
Hydrogenous Species and Charge Defects in the Si-SiO 2 System....Pages 397-409
The Role of Hydrogen in the Formation, Reactivity and Stability of Silicon (Oxy)Nitride Films....Pages 411-424
Hydrogen-Induced Donor States in the Mos System:....Pages 425-430
Future Trends in SiC-Based Microelectronic Devices....Pages 431-445
The Initial Phases of Sic-SiO 2 Interface Formation by Low-Temperature (300 ºC) Remote Plasma-Assisted Oxidation of Si and C Faces on Flat and Vicinal 6H SiC....Pages 447-459
Challenges in the Oxidation of Strained SiGe Layers....Pages 461-475
The Current Status and Future Trends of SIMOX/SOI, New Technological Applications of the SIC/SOI System....Pages 477-491
Local Tunnel Emission Assisted by Inclusions Contained in Buried Oxides....Pages 493-502
Back Matter....Pages 503-507