Field-Effect and Bipolar Power Transistor Physics

Content: 
Front Matter, Page iii
Copyright, Page iv
Dedication, Page v
PREFACE, Pages xiii-xiv
ACKNOWLEDGMENTS, Page xv
SELECTED LIST OF SYMBOLS, Pages xvii-xxiii
CHAPTER 1 - SEMICONDUCTOR SURFACE THEORY CONCEPTS, Pages 3-26
CHAPTER 2 - SEMICONDUCTOR PROPERTIES AT HIGH CARRIER CONCENTRATIONS, Pages 27-39
CHAPTER 3 - AVALANCHE BREAKDOWN, Pages 40-51
CHAPTER 4 - AVALANCHE BREAKDOWN IMPROVEMENT METHODS, Pages 52-84
CHAPTER 5 - SELECTED FABRICATION TECHNIQUES, Pages 85-100
CHAPTER 6 - POWER TRANSISTOR STRUCTURES. BIPOLAR TRANSISTOR MODELS, Pages 103-123
CHAPTER 7 - CURRENT GAIN AT HIGH CARRIER CONCENTRATIONS, Pages 124-161
CHAPTER 8 - CURRENT–VOLTAGE CHARACTERISTICS OF POWER TRANSISTORS, Pages 162-170
CHAPTER 9 - FREQUENCY RESPONSE. SWITCHING TRANSIENT. MICROWAVE TRANSISTORS, Pages 171-180
CHAPTER 10 - TRANSISTOR THERMAL PROPERTIES. INSTABILITIES, Pages 181-208
CHAPTER 11 - JUNCTION FIELD-EFFECT TRANSISTORS (JFETs), Pages 211-234
CHAPTER 12 - INSULATED GATE FIELD-EFFECT TRANSISTORS, Pages 235-269
CHAPTER 13 - MOS POWER TRANSISTOR STRUCTURES AND DESIGN CONSIDERATIONS, Pages 270-305
INDEX, Pages 307-312