Emerging Trends in Terahertz Solid-State Physics and Devices: Sources, Detectors, Advanced Materials, and Light-matter Interactions

Preface
Contents
About the Editors
THz Bandpass Filter Design Using Metamaterial-Based Defected 1D Photonic Crystal Structure
	1 Introduction
	2 Objective
	3 Mathematical Formulation
		3.1 Transmission and Reflection Coefficients for Polarized Wave Incidence
		3.2 Eigenmodes for Planar Photonic Structure
		3.3 Transmission Coefficient
	4 Results and Discussions
	5 Conclusion
	References
Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part I: Large-Signal Characteristics
	1 Introduction
	2 Substance Parameters and Design Strategy
	3 NSVE Large-Signal Model
	4 Observations and Discussion
	5 Conclusion
	References
Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part II: Avalanche Noise Characteristics
	1 Introduction
	2 A Brief History
	3 Substance Parameters and Design Strategy
	4 Small-Signal Noise Model
		4.1 Effect of Optical Illumination
		4.2 Influence of Magnetic Field
		4.3 Effect of Reduced Impact Ionization Rate
	5 Noise Characterizes of 3C-SiC IMPATT Sources
	6 Conclusion
	References
RF Performance of Ultra-wide Bandgap HEMTs
	1 Introduction
	2 GaN-Based HEMTs
		2.1 GaN Power Amplifier
	3 RF Performance of β-Ga2O3 Devices
	4 Limits to RF and DC Performance (GaN and Ga2O3 HEMTs)
	5 Conclusion
	References
Potentiality of Impact Avalanche Transit Time Diode as Terahertz Source Based on Group IV and III–V Semiconducting Materials
	1 Introduction
	2 Numerical Method and Design Parameters
	3 Results and Discussion
		3.1 Avalanche Response Time Determination
		3.2 Drift Response Time Calculation
		3.3 Drift Capacitance and Resonant Frequency
	4 Conclusion
	References
Analysis of InN-Based Surrounded Gate Tunnel Field-Effect Transistor for Terahertz Applications
	1 Introduction
	2 Device Structure and Simulatiοn
		2.1 Different Device Models
		2.2 Device and Electrical Parameter Analysis
		2.3 Proposed Methodology and Simulation Framework
	3 Results and Discussion
		3.1 DC Characteristics
		3.2 Small-Signal Analysis
	4 Conclusion
	References
On the Quantum Capacitance of Quantum Wire Field-Effect Transistors of Compound Semiconductors
	1 Introduction
	2 Theoretical Background
		2.1 The Cg in QWFET of Tetragonal Materials
		2.2 The  Cg  in QWFET of Kane-Type Compounds
		2.3 The Cg in QWFET of II–VI Materials
		2.4 The  barCG  in QWFET of IV–VI Materials
		2.5 The  Cg  in QWFET of Stressed Materials
		2.6 The  Cg  in QWFET of GaP Material
		2.7 The  Cg  in QWFET of  PtSb2  Material
		2.8 The  Cg  in QWFET of  Bi2 Te3  Material
		2.9 The  Cg  in QWFET of  Ge
		2.10 The  Cg  in QWFET of  GaSb
		2.11 The  Cg  in QWFET of II–V Materials
	3 Results and Discussion
	References
Heterostructure Devices for THz Signal Recognition
	1 Introduction
	2 Imaging with Sensing Technique of Terahertz Utilizing III–V HEMTs
		2.1 Device Manufacturing
		2.2 Demonstrations for Imaging and Sensing of Terahertz
	3 Terahertz Appliances
	4 Production and Recognition of Terahertz Radiation
	5 GaN-Supported QCL
	6 GaN-Supported HEMTs Like THz Detection Systems Depend Over Self-mixing
	7 Conclusion
	References
Data Transmission with Terahertz Communication Systems
	1 Introduction
	2 Choice of the Carrier Frequency
	3 Channel Modeling
	4 Modulation Schemes
		4.1 OOK Modulation
		4.2 QPSK Modulation
	5 Spectral Efficiency of Single Carrier System
	6 GMSK and MSK Modulation
	7 THz 16 QAM/QPSK Transmission
		7.1 Power Spectral Density
		7.2 Alamouti Scheme for MIMO System
		7.3 Maximum Ratio Combining
		7.4 Alamouti Code in MIMO System with RMC Receiver
		7.5 Discussion of the Results and Their Context
	8 Conclusion
	References
Advances in Terahertz Imaging
	1 Introduction
	2 Terahertz Imaging Components
	3 Imaging Methods for Terahertz Waves
		3.1 THz Time-Domain Spectroscopy System Imaging
		3.2 Terahertz Reflection, Transmission and Conductivity Imaging
		3.3 THz Pulsed Imaging
		3.4 THz Computed Tomography
		3.5 THz Near-Field Imaging
	4 Terahertz Imaging Cameras
		4.1 Terahertz FET-Based Cameras
		4.2 Terahertz Thermal Cameras
	5 Applications
		5.1 Biomedical Applications
		5.2 Security Applications
		5.3 Food Industry
		5.4 Art Conservation
		5.5 Pharmaceutical Industry
		5.6 Polymer and Paper Industries
	6 Conclusion
	References
Terahertz Emission Mechanisms in III–V Semiconductors: The Influence of Isoelectronic Dopants
	1 Introduction
	2 THz Emission from Semiconductors
	3 Isoelectronic Doping
	4 III–V Bismide Alloys
	5 Structural Properties
	6 Optoelectronic Properties
	7 Transport Properties
	8 Terahertz Emission from III–V-Bismide Alloys
	9 GaAsBi
		9.1 Optical Rectification
		9.2 Transient Photocurrents
		9.3 Photoconductive Antennas
		9.4 GaSbBi
		9.5 Application in THz Spectroscopy
	References
Group III—Nitrides and Other Semiconductors for Terahertz Detector
	1 Introduction
	2 Important Figures of Merit
	3 Various Types of Terahertz Detectors
	4 Conclusion
	References