Defect Control in Semiconductors

Content: 
Front Matter, Page iii
Copyright, Page iv
PREFACE, Pages v-vi, K. Sumino
Acknowledgement, Page vi
Inside Front Matter, Pages vii-viii
OPTICALLY-DETECTED MAGNETIC RESONANCE OF DEFECTS IN THIN LAYERS AND HETEROSTRUCTURES OF III-V SEMICONDUCTORS, Pages 975-983, T.A. KENNEDY, E.R. GLASER, B. MOLNAR, M.G. SPENCER
THERMODYNAMIC MODEL OF NATIVE DEFECTS IN III–V TERNARY ALLOYS GROWN BY LIQUID–PHASE EPITAXY, Pages 985-990, Masaya ICHIMURA, Takao WADA
THERMODYNAMICAL STUDY OF POINT DEFECTS IN LPE-AlxGa1−xSb, Pages 991-996, K. HIGUCHI, N. KITAMURA, Y. HATTORI, M. ICHIMURA, T. WADA
KINETIC EFFECTS AND IMPURITY INCORPORATION IN MBE GROWTH OF GALLIUM ARSENIDE, Pages 997-1008, G.E. Stillman, B. Lee, I. Szafranek, M.A. Plano, M.J. McCollum, S.S. Bose, M.H. Kim
FORMATION OF NEW PAIR-LIKE EMISSIONS BETWEEN DEFECTS AND DONOR-IMPURITIES IN Ge-DOPED GaAs GROWN BY MBE, ANNEALED AT HIGH TEMPERATURES, Pages 1009-1014, P. Phelan, Y. Makita, H. Shibata, A. Yamada, N. Ohnishi, A.C. Beye
MICROSCOPIC STRUCTURE AND COMPENSATION MECHANISM OF HEAVILY Si-DOPED GaAs GROWN ON (111)A, B AND (100) SUBSTRATES BY MOLECULAR BEAM EPITAXY, Pages 1015-1020, Isao FUJIMOTO, Yoshimichi OKANO, Hiroyuki SETO, Kenji NAKANISHI, Seiji TSUJI, Hisashi KATAHAMA, Shiro NISHINE, Takeo SUZUKI
CHARACTERIZATION OF LATTICE SITES AND COMPENSATION MECHANISM IN HEAVILY Si-DOPED GaAs WITH LASER RAMAN SPECTROSCOPY, Pages 1021-1025, Masashi UEMATSU, Koichi MAEZAWA
IDENTIFICATION OF THE Fe ACCEPTOR LEVEL IN Ga0.47In0.53As LAYERS, Pages 1027-1031, Gérard GUILLOT, Georges BREMOND, Taha BENYATTOU, Frédérique DUCROQUET, Bruno WIRTH, Muriel COLOMBET, Abdelkader LOUATI, Ali BENCHERIFA
Nonradiative recombination in p-type ZnSe grown by molecular beam epitaxy, Pages 1033-1036, Takao Miyajima, Katsuhiro Akimito, Yoshifumi Mori
PRESSURE EFFECTS ON DEEP LEVELS IN SEMICONDUCTORS, Pages 1037-1041, Ken-ichi TAKARABE, Shigeru MINOMURA, Masahiko KUSAKA, Koichiro MATSUDA, Takashi MATSUMOTO
THE DX CENTER IN GaAs AND AlGaAs: METASTABLE BEHAVIOR OF A SIMPLE SUBSTITUTIONAL DONOR, Pages 1043-1050, Masashi MIZUTA
METASTABILITY OF THE DX CENTER IN GaAlAs : DLTS AND EPR STUDIES, Pages 1051-1054, H.J. von BARDELEBEN, J.C. BOURGOIN
BISTABLE NATURE OF DX CENTERS IN AlGaAs, Pages 1055-1060, J.E. DMOCHOWSKI, L. DOBACZEWSKI, J.M. LANGER, W. JANTSCH
CONTROL OF OPTICALLY PUMPED STATES OF DEEP LEVELS IN AlxGa1−xAs THROUGH SUBSTITUTION OF Al, Pages 1061-1066, Hiroshi OHKURA, Yuzo MORI, Akira HONDA, T. YOKOTA, Yoshinori CHIBA, Toshiya TOYOSHIMA
DX CENTRE IN GaAs1−XPX UNDER HIGH HYDROSTATIC PRESSURE, Pages 1067-1071, Jan ZEMAN, Václav ŠMÍD, Jozef KRIŠTOFIK, Pavel HUBÍK, Jiří J. MAREŠ, Viktor Ya. PRINZ, Sergei N. RECHKUNOV
STUDIES OF DX-CENTERS IN AlxGa1-xAs: Te BY C2-SADLTS, Pages 1073-1078, Jun MORIMOTO, Shuuji TASHIRO, Hideaki YONEKURA, Kenichiro TAHIRA, Toru MIYAKAWA
MICROSTRUCTURAL CHARACTERISTICS OF PHASE SEPARATED AND ORDERED EPITAXIAL LAYERS OF III-V COMPOUND SEMICONDUCTORS, Pages 1079-1084, T.L. MCDEVITT, S. MAHAJAN, D.E. LAUGHLIN, F.S. TURCO, M.C. TAMARGO, M.A. SHAHID, W.A. BONNER, V.G. KERAMIDAS
GROWTH DYNAMICS AND SUBLATTICE ORDERING IN MBE-GROWN InGaAs PSEUDOBINARY ALLOY, Pages 1085-1090, Hiroshi NAKAYAMA, Tsuyoshi TAKENAKA, Hiroshi FUJITA, Kazuyuki UEDA, Taneo NISHINO
TEM INVESTIGATION OF DEFECTS IN GaAsSb CRYSTALS GROWN ON (001) InP SUBSTRATES BY MOLECULAR BEAM EPITAXY, Pages 1091-1096, O. UEDA, T. FUJII, Y. NAKATA
THE STRUCTURAL CHARACTERISATION OF ADVANCED COMPOUND SEMICONDUCTOR HETEROEPITAXIAL SYSTEMS BY TRANSMISSION ELECTRON MICROSCOPY, Pages 1097-1105, A.G. CULLIS
THE INFLUENCE OF NATURE AND COMPOSITION OF III-V QUATERNARY SOLID SOLUTIONS UPON THE DISLOCATION STRUCTURE FORMATION IN EPITAXIAL HETEROCOMPOSITIONS, Pages 1107-1109, V.I. Vdovin, V.S. Krasilnikov, T.G. Yugova
DEFECTS AND MICROSTRUCTURES IN VAPOR PHASE EPITAXIAL GROWN GaAsxP1−x/GaP, Pages 1111-1116, S. Takeda, M. Hirata, T. Sato, H. Fujita, K. Fujii
CHARACTERIZATION OF THE InGaAsP/GaAs INTERFACE BY X-RAY MULTIPLE DIFFRACTION, Pages 1117-1121, S.L. MORELHÃO, L.P. CARDOSO, J.M. SASAKI, A.C. SACHS
TEM CHARACTERIZATION OF CdTe LAYERS GROWN ON GaAs (111)B BY HOT WALL EPITAXY, Pages 1123-1128, A. HOBBS, O. UEDA, Y. NISHIJIMA, H. EBE, K. SHINOHARA, I. UMEBU
LATTICE DEFECTS AND STRAIN IN ZnTe LAYERS GROWN ON (100) GaAs BY LOW-PRESSURE MOCVD USING PRECRACKING TECHNIQUE, Pages 1129-1134, Mitsuru EKAWA, Tsunemasa TAGUCHI
DEFECT ASSISTED STRESS FLUCTUATIONS AND IMPURITY DIFFUSION MECHANISMS IN GaAs ON Si, Pages 1135-1140, A. FREUNDLICH, D. LE SI DANG, H. KAMADA, G. NEU
NATURE AND BEHAVIOR OF ANTI-PHASE-DOMAINS IN GaAs/Si HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION, Pages 1141-1146, O. UEDA, T. SOGA, T. JIMBO, M. UMENO
DEFECTS IN HETEROEPITAXIAL SEMICONDUCTOR SYSTEMS, Pages 1147-1151, H.P. Strunk, M. Albrecht
In-Situ Studies of Growth, Defects and Reconstruction at Epitaxial Silicide/Silicon Interfaces, Pages 1153-1155, J.M. Gibson, D. Loretto, S.M. Yalisove
A LOW DEFECT DENSITY SiNx/(100)Si INTERFACE MADE BY HYBRID-EXCITATION CVD, Pages 1157-1161, Shigeichi YAMAMOTO, Masatoshi MIGITAKA
INFLUENCE OF OXYGEN AND H2O TRACES IN THE CARRIER GAS ON THE MORPHOLOGY AND STRUCTURE OF THIN SiO2, Si3N4 AND POLY-SILICON FILMS, Pages 1163-1166, G. BESHKOV, L. POPOVA, V. GEORGUIEV, V. LAZAROVA
INTERFACE STRUCTURE OF Si/SiO2/Si FORMED BY MOLECULAR BEAM DEPOSITION, Pages 1167-1171, Akira Sakai, Toru Tatsumi, Taeko Niino, Hiroyuki Hirayama, Koichi Ishida
Mechanism of {111} Facet Formation during Lateral Solid Phase Epitaxy of Silicon on Amorphous Insulator Substrates, Pages 1173-1177, Tomo Ueno, Kazumasa Suzuki, Kaori Iemura, Kenji kawai, Toru Morisawa, Iwao Ohdomari
Crystallization of Amorphous Silicon on Titanium Films, Pages 1179-1183, Fumio Sato, Tatsuya Ohkubo, Takeo Suzuki
Heteroepitaxial Films Consisting of a Mosaic Structure : Crystallographic Characterization, Pages 1185-1190, Nobuo ITOH
THE CHANGE OF ELECTRICAL CONDUCTIVITY OF SPUTTERED SIC FILM DUE TO THE RECRYSTALLIZATION, Pages 1191-1196, Yoshiko H. Ohashi, Sigeru Matumura, Mitsuru Fukuchi, Kazutoshi Ohashi, Masanori Oyama, Makio Kato
THE EFFECT OF OXYGEN IMPURITY ON THE THERMAL CONDUCTIVITY OF SPUTTERED SIC FILM, Pages 1197-1201, Yoshiko H. OHASHI, Tomokazu UMEZAWA, Mitsuru FUKUCHI, Kazutoshi OHASHI, Masanori OYAMA, Makio KATO
CATHODOLUMINESCENCE IMAGING OF DEFECTS AT SEMICONDUCTOR SURFACES AND INTERFACES, Pages 1203-1211, Marius GRUNDMANN, Jürgen CHRISTEN, Dieter BIMBERG
EFFECTS OF DEFECTS ON IMPURITY-INDUCED DISORDERING OF AlGaAs-GaAs SUPERLATTICES, Pages 1213-1222, Hisao NAKASHIMA
IMPURITY TRAPPING IN NOMINALLY UNDOPED GaAs/AIGaAs QUANTUM WELLS, Pages 1223-1228, P.W. EPPERLEIN, H.P. MEIER
ELECTRICAL PROPERTIES OF DEFECTS IN SUPERLATTICES, Pages 1229-1233, S.L. FENG, J.C. BOURGOIN
DEFECTS IN AlAs LAYERS AND GaAs-AlAs SUPERLATTICES, Pages 1235-1238, S.L. FENG, J.C. BOURGOIN
SUPERCONDUCTIVITY IN SUPERLATTICES WITH SUPERDISLOCATIONS, Pages 1239-1243, Tadeusz FIGIELSKI
INFLUENCE OF DEFECTS ON THE DEGRADATION OF III-V OPTO-ELECTRONIC DEVICES, Pages 1245-1254, O. Ueda
Characterization of Defects in VPE grown InGaAs/InP Avalanche Photodiode, Pages 1255-1260, Matsuto Ogawa, Takaaki Murakami, Hiroto Matsubayashi, Satoshi Shimizu, Tanroku Miyoshi
SURFACE TRAP INVESTIGATION BY DLTS ON GaInAs PHOTODIODES PASSIVATED BY UVCVD-SiNx, Pages 1261-1266, Frédérique DUCROQUET, Georges BREMOND, Gérard GUILLOT, Jean-Charles RENAUD, Alain NOUAILHAT
DX CENTERS AND THE LOW TEMPERATURE BEHAVIOR OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS, Pages 1267-1272, I. IZPURA, E. MUÑOZ, E. CALLEJA, G. HILL, J. ROBERTS, M.A. PATE, P. MISTRY, N.Y. HALL
MICROSCOPIC DEFECTS IN SEMI-INSULATING GaAs AND THEIR EFFECT ON THE FET DEVICE CHARACTERISTICS, Pages 1273-1278, Hiromasa YAMAMOTO, Haruhito SHIMAKURA, Gaku KANO, Mitsuaki SEIWA, Hirofumi NAKATA, Osamu ODA
IMPURITY Fe RELATED DEEP LEVELS AT InGaAsP/InP(Fe) INTERFACES, Pages 1279-1282, Isao KIDOGUCHI, Minoru KUBO, Nobuyuki OTSUKA, Kenichi MATSUDA, Tadashi NARUSAWA
FEATURE OF DEFECT FORMATION IN HOMOEPITAXIAL STRUCTURES GaAs UNDER CONDITIONS OF THERMAL SIGN CHANGE EFFECT AND LOCAL DEVIATION FROM THE STOICHIOMETRY, Pages 1283-1285, A.A. Kalinin, M.G. Milvidsky, A.A. Shlensky, T.G. Yugova
DEFECT REDUCTION OF GaAs ON Si BY ALLOY STRAINED SUPERLATTICE LAYERS, Pages 1287-1294, Masayoshi UMENO, Takashi JIMBO, Tetsuo SOGA
HETEROEPITAXY OF GaAs ON Si: METHODS TO DECREASE THE DEFECT DENSITY IN THE EPILAYER, Pages 1295-1305, Zuzanna LILIENTAL-WEBER, E.R. WEBER, J. WASHBURN
ETCH PITS STUDY OF MOCVD-GROWN GaAs ON Si WITH III-V COMPOUND INTERMEDIATE LAYERS, Pages 1307-1311, Tetsuo SOGA, Hironobu NISHIKAWA, Shinji NOZAKI, Nobuhiko NOTO, Takashi JIMBO, Masayoshi UMENO
MIGRATION-ENHANCED EPITAXY OF COMPOUND SEMICONDUCTORS, Pages 1313-1324, Naoki Kobayashi, Yoshiji Horikoshi
DECREASE OF EPITAXIAL TEMPERATURE AND INCREASE OF SELECTIVITY DUE TO DRASTICAL REDUCTION OF CONTAMINATION IN SILICON AND GERMANIUM CVD, Pages 1325-1329, J. Murota, M. Kato, T. Sato, M.L. Cheng, S. Kobayashi, A. Kohlhase, N. Mikoshiba
TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS, Pages 1331-1341, A.G. MILNES, A.Z. LI, H.K. KIM, J.C. JEONG, Z-Q FANG, J. ZHAO, T.E. SCHLESINGER
ZnSe/GaAs HETEROINTERFACE CHARACTERIZATION BY A NEW DLTS ANALYSIS, Pages 1343-1348, T. HARIU, S. YAMAUCHI, T. KITAGAKI, Y. NUMAGAMI
Effect of Hg Annealing on Defect-Luminescence Bands in MOCVD-Grown CdTe Layers, Pages 1349-1353, Katsuhiko OHBA, Chikara ONODERA, Tsunemasa TAGUCHI, Yukio HIRATATE, Akio HIRAKI
Hydrogen Incorporation in Plastically Deformed and Polycrystalline Silicon, Pages 1357-1368, U. Voermanns, C. Kisielowski-Kemmerich, H. Alexander
ATOMISTIC SIMULATION STUDY ON DISLOCATION LOCKING BY IMPURITY CLUSTERS IN SI CRYSTAL, Pages 1369-1374, Kinichi MASUDA-JINDO, Kenichi KOJIMA, Seiji KAWADO
INFLUENCE OF POINT DEFECTS ON THE KINK MOBILITY ALONG THE DISLOCATION LINE IN SI SINGLE CRYSTALS, Pages 1375-1380, V.I. NIKITENKO, B.Ya. FARBER, H.G. MINASYAN
DISLOCATION MOBILITY AT HIGH-TEMPERATURE UNIAXIAL TENSION OF SILICON SINGLE CRYSTALS, Pages 1381-1385, V.A. Makara, N.N. Melnichenko
ON THE INFLUENCE OF FREE CARRIERS ON THE MOBILITY OF DISLOCATIONS IN SEMICONDUCTORS, Pages 1387-1391, Yu.A. OSSIPYAN, M.Sh. SHIKHSAIDOV
ACOUSTIC METHODS TO STUDY DISLOCATIONS IN A2B6 SEMICONDUCTORS, Pages 1393-1396, V.A. Robsman, M.Sh. Shikhsaidov
DISLOCATION LEVEL AS INFERRED FROM RECOMBINATION ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS, Pages 1397-1402, Narihiko MAEDA, Shin TAKEUCHI
PHOTOPLASTICITY IN SEMICONDUCTORS, Pages 1403-1405, J.M. Galligan, T.J. Garosshen, C.S. Kim
PHOTOMECHANICAL EFFECTS IN SILICON, Pages 1407-1409, B.I. SMIRNOV, V.V. SHPEIZMAN
BROKEN BOND CENTERS AT DISLOCATIONS IN SILICON AND GERMANIUM, Pages 1411-1415, H. TEICHLER
INVESTIGATION OF ONE-DIMENSIONAL DEFECTS IN SI USING THE EDSR, Pages 1417-1422, V.V. KVEDER, T.R. MCHEDLIDZE, Yu.A. OSIPYAN, A.I. SHALYNIN
ENERGY LEVELS AND THERMAL STABILITY OF DEFORMATION-INDUCED DEFECTS IN n-TYPE SILICON, Pages 1423-1429, Hiroshi KAMIYAMA, Koji SUMINO
EFFECTS OF THE He ATOMS ON DISLOCATION CORE STRUCTURE IN SEMICONDUCTORS, Pages 1431-1435, Bronislaw POHORYLES
MINORITY CARRIER DIFFUSION LENGTH AND DEFECT LEVELS IN PLASTICALLY DEFORMED SILICON CRYSTALS, Pages 1437-1442, Kiyoshi YASUTAKE, Yoshiharu TANAKA, Akihiro TAKEUCHI, Kumayasu YOSHII, Hideaki KAWABE
EFFECT OF DISLOCATIONS ON THE LOCAL ELECTRICAL PROPERTIES OF N-SI, Pages 1443-1446, Irina E. Bondarenko, Eugene B. Yakimov
FINE STRUCTURE OF THE DISLOCATION PHOTOLUMINESCENCE SPECTRA IN GE AND SI, Pages 1447-1452, A.N. IZOTOV, A.I. KOLYUBAKIN, S.A. SHEVCHENKO, E.A. STEINMAN
DETECTION OF DISLOCATION-RELATED PHOTOLUMINESCENCE BANDS IN SI-GE ALLOYS GROWN BY LIQUID PHASE EPITAXY, Pages 1453-1457, Jörg WEBER, Maria Isabel ALONSO
ELECTRON PARAMAGNETIC RESONANCE OF PLASTICALLY DEFORMED SEMI-INSULATING GaAs, Pages 1459-1463, S. BENAKKI, T. BENCHIGUER, E. CHRISTOFFEL, A. GOLTZENE, C. SCHWAB, WANG GUANGYU, WU JU
ELECTRONIC PROPERTIES OF DISLOCATIONS IN GaAs, Pages 1465-1470, Tadeusz WOSINSKI
A DLTS STUDY OF EL2 SUBPEAK IN PLASTICALLY DEFORMED GaAs, Pages 1471-1475, Yutaka MERA, Kensuke MIYAHARA, Hiroaki YASUDA, Koji MAEDA
CATHODOLUMINESCENCE RELATED TO DISLOCATIONS IN GaAs, Pages 1477-1481, Takashi SEKIGUCHI, Ichiro YONENAGA, Koji SUMINO
OPTICAL PROPERTIES OF PLASTICALLY DEFORMED AND ELECTRON-IRRADIATED INDIUM PHOSPHIDE, Pages 1483-1487, Yoshimasa HORII, Masashi SUEZAWA, Koji SUMINO
Microscopic Analyses of Semiconductor Surfaces by STM, Pages 1491-1498, Hiroshi TOKUMOTO, Kazushi MIKI
DEVELOPMENT OF A BULK MICRO-DEFECT ANALYZER FOR SILICON WAFERS, Pages 1499-1504, Kazuo MORIYA, Katsuyuki HIRAI
LST ANALYSIS OF SILICON OXIDE MICRO PRECIPITATES IN SILICON MATERIALS, Pages 1505-1510, Pascale GALL, Jean-Pierre FILLARD, Jacques BONNAFE, Tina RAKOTOMAVO, Anne-Marie PAPON, Jean-Pierre JOLY, Véronique ROBERT
EBIC STUDIES OF GETTERING IN SILICON, Pages 1511-1522, Martin KITTLER
PROCESS-INDUCED DEFECT CHARACTERIZATION IN III-V COMPOUNDS, Pages 1523-1528, Aranka HUBER, Claude GRATTEPAIN, Philippe COLLOT
CHARACTERIZATION OF MICRO-DEFECTS IN NEARLY PERFECT CRYSTALS BY ANALYZING THE PENDELLÖSUNG FRINGES IN THE SECTION TOPOGRAPHS OF HIGH-ORDER REFLECTIONS, Pages 1529-1534, Satoshi IIDA, Hiroshi TAKENO, Yasuyoshi YAGOU, Nobuo KASAGI, Yoshimitsu SUGITA, Hiroshi KAWATA
MULTIPLE DIFFRACTION SIMULATION IN THE STUDY OF EPITAXIAL LAYERS, Pages 1535-1539, C.A.B.SALLES DA COSTA, L.P. CARDOSO, V.L. MAZZOCCHI, C.B.R. PARENTE
Morphology of Oxygen Precipitates in CZ Silicon Studied by Small Angle Neutron Scattering (SANS), Pages 1541-1545, H. Rauh, D. Sieger, A. Wright
CONTROL OF SEMICONDUCTOR SURFACE, TRACE METAL CONTAMINATION BY TOTAL REFLECTION X-RAY FLUORESCENCE (TXRF), Pages 1547-1552, R.S. HOCKETT
PROCESS INDUCED DEFECTS CONTROLLED BY LIGHTSCATTERING MEASUREMENTS, Pages 1553-1559, P.O. Hahn, P. Wagner, E. Guerrero, M. Kerstan, A. Schnegg
DEFECTS IN SEMICONDUCTORS INVESTIGATED BY POSITRON ANNIHILATION, Pages 1561-1572, Steen DANNEFAER
STUDY OF POINT DEFECTS IN THE BULK OF Si BY TWO DIMENSIONAL ANGULAR CORRELATION OF POSITRON ANNIHILATION RADIATIONS, Pages 1573-1578, Shoichiro Tanigawa, Kazuhiro Watanabe, Toshikazu Kurihara, Takeshi Kubota
DIRECT OBSERVATION OF ACCEPTOR-DONOR PAIRING IN SEMICONDUCTORS BY THE PAC-SPECTROSCOPY, Pages 1579-1584, S. DEUBLER, N. ACHTZIGER, A. BAURICHTER, D. FORKEL, H. PLANK, M. PUSCHMANN, H. WOLF, W. WITTHUHN
DISPERSIVE MICROWAVE TRANSIENT SPECTROSCOPY OF DEEP LEVELS IN SEMICONDUCTORS, Pages 1585-1591, G. Ferenczi, D. Huber, T. Pavelka, P. Eichinger, G. Veszely
Determination of Concentration Profile and Field Enhanced Emission Rate of Midgap Level in GaAs by Constant Capacitance Technique, Pages 1593-1598, Hajime Tomokage, Ming-Bing Chang, Jeng-Jye Shiau, Richard H. Bube, John C. Bravman
DETERMINATION OF THE DEEP-STATE CONCENTRATION IN SEMI-INSULATING GaAs BASED ON NEW CAPACITANCE AND CONDUCTANCE DLTS, Pages 1599-1604, František DUBECKÝ, Božena OLEJNÍKOVÁ
METHOD OF SPIN-MARKING IN SEMICONDUCTORS, Pages 1605-1608, P.A. ALEXANDROV, S.M. YAKUBENYA
DEFECT CONTROL IN ORGANIC CRYSTALS, Pages 1611-1621, John N. SHERWOOD
DEFECT STRUCTURES OF ORGANIC THIN CRYSTALS STUDIED BY DIRECT IMAGING OF MOLECULES WITH A HIGH RESOLUTION ELECTRON MICROSCOPE, Pages 1623-1627, TAKASHI KOBAYASHI, NORIKO YAMAMOTO-ASAKA, TAKASHI MAEDA, NOBORU KAWASE
STRUCTURE AND PROPERTIES OF ULTRA-THIN ORGANIC FILMS PREPARED BY MBE METHOD, Pages 1629-1634, Y. Maruyama, H. Hoshi, A.J. Dann, T. Inabe, M.R. Willis
STRUCTURAL CHANGE OF OCTACYANOPHTHALOCYANINE THIN FILM BY ELECTROREDUCTION, Pages 1635-1640, Hisao YANAGI, Kimiya TAKESHITA, Michio ASHIDA
X-RAY TOPOGRAPHIC CHARACTERIZATION OF DEFECTS IN ORGANIC CRYSTALS, Pages 1641-1652, Helmut KLAPPER
LATTICE DEFECTS IN DIACETYLENE SINGLE CRYSTALS, Pages 1653-1658, Kunihide IZUMI, Minoru KONDO, Mitsuyoshi MATSUSHITA, Akio ISHIZAWA
THEORETICAL AND EXPERIMENTAL STUDIES OF CRYSTALLINE DEFECTS IN ORGANIC MOLECULAR SOLIDS, Pages 1659-1665, L. BONPUNT, A. DAUTANT
CALCULATIONS ON A VACANCY AND AN EDGE DISLOCATION IN ANTHRACENE CRYSTALS, Pages 1667-1672, Isamu OKADA, Naoki IDE, Kenichi KOJIMA
PHOTOPLASTIC EFFECT AND CHARACTERISTICS OF DISLOCATIONS IN ORGANIC SEMICONDUCTORS, Pages 1673-1678, Kenichi KOJIMA, Akira UEDONO
LOCAL TRAPPING STATES OF STRUCTURE ORIGIN IN ORGANIC SEMICONDUCTORS: NATURE, DISTRIBUTION CHARACTERISTICS, METHODS OF CONTROL, Pages 1679-1689, Edgar A. SILINSH
Electrical Conduction Influenced by Some Discrete Carrier Trap States in Anthracene Single Crystals, Pages 1691-1696, Shigeyoshi MAETA, Fukuzo YOSHIDA, Toshifumi AKIYAMA
TRAPS AND ANTITRAPS IN ORGANIC CRYSTALS, Pages 1697-1699, Masahiro KOTANI
THE DIPOLE TRAPS OF THE CHARGE CARRIERS IN IMPURITY ORGANIC SEMICONDUCTORS, Pages 1701-1704, Nina OSTAPENKO, Vladimir SUGAKOV
SPATIALLY EXTENDED DEFECTS AS CHARGE TRAPS IN SPACE-CHARGE-LIMITED CURRENTS IN ORGANIC SOLIDS, Pages 1705-1714, Jan KALINOWSKI, Jan GODLEWSKI, Piotr MONDALSKI
EXCESS ELECTRONS TRAPPED IN ALKANEDIOL CRYSTALS AT LOW TEMPERATURE - REACTION AND POSSIBLE STRUCTURE -, Pages 1715-1719, Masaaki OGASAWARA, Mikael LINDGREN, Hiroto TACHIKAWA
THE PREPARATION OF ANTHRACENE FILMS AND THEIR EL PROPERTIES, Pages 1721-1724, Kazutoshi TSUJINO, Hironori OKII, Yujiro OHBA
GETTING BEYOND IMPURITY-LIMITED TRANSPORT IN ORGANIC PHOTOCONDUCTORS, Pages 1725-1746, Norbert KARL
AUTHOR INDEX, Pages xxix-xxxiv
List of categories in the subject index, Page xxxv
SUBJECT INDEX, Pages xxxvii-xliv