Convergence of more Moore, more than Moore and beyond Moore : materials, devices, and nanosystems

Cover
Half Title
Title Page
Copyright Page
Table of Contents
Preface
Acknowledgments
Introduction
Part I: From Nanoelectronics to Diversified Nanosystems
	Chapter 1: The Era of Sustainable and Energy Efficient Nanoelectronics and Nanosystems
		1.1: Introduction
		1.2: Energy and Variability Efficient Nanoelectronics
			1.2.1: Moore’s Law, More than Moore, and Beyond Moore Challenges and Sustainability
			1.2.2: Innovations and Trends Leading to Market Drivers
				1.2.2.1: CMOS technology as a driver
				1.2.2.2: Memories as market drivers and hierarchy in information processing
				1.2.2.3: Pushing further the limits or introducing innovative approaches
			1.2.3: Geometrical Downscaling of Logic Devices: MOSFET Electrostatic Integrity
				1.2.3.1: Introduction of breakthrough modules
				1.2.3.2:  Opportunities for tunneling field effect transistors
			1.2.4: Memory Scaling
				1.2.4.1: Conventional scaling hits the limit
				1.2.4.2:  Nanofloating gates to help conventional NVM scaling?
				1.2.4.3: Three-dimensional integration for mass storage
				1.2.4.4: Alternative architectures to floating gate cells
			1.2.5: Towards Zero Intrinsic Variability Through New Fabrication Paradigms
		1.3: More Moore and More than Moore Co-integrated into 3D Zero Power Systems
	Chapter 2: From 2D to 3D Nonvolatile Memories
		2.1: 2D and 3D NAND Array Architecture
			2.1.1: Array Architecture
			2.1.2: Cell Architecture
		2.2: Scaling Limitations of 2D NAND and Transitions to 3D NAND
			2.2.1: Few-Electron Effects
			2.2.2: Fluctuation of the Number of Electrons (Program Noise)
			2.2.3: VT Instability due to Charge Trap/Detrap
			2.2.4: Cell-to-Cell Interference
		2.3: Key Technology Features of 3D NAND
			2.3.1: 3D NAND Architectures
			2.3.2: GIDL Erase
			2.3.3: Thin Polysilicon Channel
			2.3.4: CMOS Under Array
			2.3.5: Four Bits/Cell QLC
		2.4: 3D NAND Technology Scaling
		2.5: Conclusions
	Chapter 3: Three-Dimensional Vertical RRAM
		3.1: Introduction
		3.2: Architectures of 3D Vertical RRAM
		3.3: Memory Cells in 3D VRRAM Architectures
			3.3.1: Sneak Path Issues in 3D VRRAM
			3.3.2: Self-Rectifying RRAM
			3.3.3: Built-in Nonlinearity RRAM
				3.3.3.1: SSC with threshold type selection layer
				3.3.3.2: SSC with exponential type selection layer
		3.4: Challenges for 3D VRRAM
		3.5: Conclusions
	Chapter 4: SOI Technologies for RF and Millimeter-Wave Applications
		4.1: Introduction
		4.2: SOI Devices
			4.2.1: Device Architecture and Electrostatics
			4.2.2: A Brief History of SOI Devices
			4.2.3: High-Performance RF and Millimeter-Wave PD-SOI and FD-SOI
			4.2.4: Low-Power FD-SOI
			4.2.5: Summary
		4.3: State-of-the-Art SOI ICs
			4.3.1: RF Front-End Modules: History
			4.3.2: RF Front-End Modules: Future Trends
			4.3.3: Summary
		4.4: Silicon-Based Substrates at RF
			4.4.1: From Standard Silicon to HR- and TR-SOI
			4.4.2: Substrate Impact on Coplanar Technology: Measurements and Modeling Techniques
			4.4.3: Quality of Integrated Passive Devices: Inductors and Filters
			4.4.4: Substrate Noise Coupling: Crosstalk and Isolation
			4.4.5: Substrate Linearity: Signal Distortion Induced by Silicon-Based Substrate Materials
			4.4.6: Application Example: Substrate Impact on RF Switch Modules
			4.4.7: Summary
		4.5: Next-Generation Silicon Substrate Solutions
			4.5.1: Buried PN Depletion Junction Substrates
			4.5.2: Post-Process Local Porous Silicon
			4.5.3: RF Performance of Buried PN and PSi Substrates
			4.5.4: Summary
		4.6: Conclusion
Part II: Nanofunctions for Augmented Nanosystems
	Chapter 5: Graphene Nanoelectromechanical Switch: Ultimate Downscaled NEM Actuators to Single-Molecule and Zeptogram Mass Sensors
		5.1: Introduction
		5.2: Graphene
			5.2.1: Graphene as a NEM Switch Material
			5.2.2: Graphene as a Gas-Sensitive Material
			5.2.3: Graphene Devices
				5.2.3.1: Mechanical exfoliation of graphene
				5.2.3.2: Epitaxial graphene technique
				5.2.3.3: Chemical vapor deposition of graphene
		5.3: Graphene Nanoelectromechanical Switch
		5.4: Bottom-Gate Two-Terminal GNEM Switch
		5.5: Top-Gate Doubly Clamped Two-Terminal GNEM Switch
		5.6: Top-Gate Two-Terminal Cantilever GNEM Switch
		5.7: Three-Terminal GNEM Switch with All Two-Dimensional Materials
		5.8: Large-Scale Nanocrystalline GNEM Switch
		5.9: GNEM Sensor for Single-Molecule Adsorption Detection
		5.10: Graphene Resonator Sensor for Ultrasmall Mass Detection
		5.11: Summary
	Chapter 6: Self-Powered 3D Nanosensor Systems for Mechanical Interfacing Applications
		6.1: Application Needs for 3D Self-Powered Nanosensor Systems
		6.2: Piezotronic Effect–Enabled 3D Self-Powered Tactile Nanosensor Systems
		6.3: Piezophotonic Effect–Enabled 3D Self-Powered Nanosensor Systems
		6.4: Contact Triboelectrification-Enabled 3D Self-Powered Active Nanosensor Systems
		6.5: Conclusion and Outlook
	Chapter 7: Miniaturization and Packaging of Implantable Biomedical Silicon Devices
		7.1: Introduction
		7.2: From Titanium Box to Silicon Box
		7.3: From Box Encapsulation to Thin-Film Encapsulation
			7.3.1: Corrosion of Aluminum in PBS
			7.3.2: Barrier Properties of SiO2 in PBS
			7.3.3: Barrier Properties of Al2O3/TiO2 in PBS
			7.3.4: Barrier Properties of Ti–TiN in PBS
			7.3.5: Optimal Stacking as Barrier Against PBS
		7.4: Biocompatibility
		7.5: Conclusion
Index