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دانلود کتاب Computational Electronics: Semiconductor Transport and Device Simulation
دانلود کتاب الکترونیک محاسباتی: حمل و نقل نیمه هادی و شبیه سازی دستگاه
مشخصات کتاب
Computational Electronics: Semiconductor Transport and Device Simulation
ویرایش: 1 نویسندگان: M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K. Smith, E. Sangiorgi (auth.), K. Hess, J. P. Leburton, U. Ravaioli (eds.) سری: The Springer International Series in Engineering and Computer Science 113 ISBN (شابک) : 9781441951229, 9781475721249 ناشر: Springer US سال نشر: 1991 تعداد صفحات: 272 زبان: English فرمت فایل : PDF (درصورت درخواست کاربر به PDF، EPUB یا AZW3 تبدیل می شود) حجم فایل: 9 مگابایت
قیمت کتاب (تومان) : 37,000
کلمات کلیدی مربوط به کتاب الکترونیک محاسباتی: حمل و نقل نیمه هادی و شبیه سازی دستگاه: مهندسی برق، ریاضیات محاسباتی و آنالیز عددی، فیزیک حالت جامد، طیف سنجی و میکروسکوپ
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توجه داشته باشید کتاب الکترونیک محاسباتی: حمل و نقل نیمه هادی و شبیه سازی دستگاه نسخه زبان اصلی می باشد و کتاب ترجمه شده به فارسی نمی باشد. وبسایت اینترنشنال لایبرری ارائه دهنده کتاب های زبان اصلی می باشد و هیچ گونه کتاب ترجمه شده یا نوشته شده به فارسی را ارائه نمی دهد.
توضیحاتی در مورد کتاب الکترونیک محاسباتی: حمل و نقل نیمه هادی و شبیه سازی دستگاه
توضیحاتی درمورد کتاب به خارجی
Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.
فهرست مطالب
Front Matter....Pages i-xiii
Front Matter....Pages 1-1
Device Simulation for Silicon ULSI....Pages 3-13
Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor Models....Pages 15-20
Drift-Diffusion Systems: Analysis of Discretized Models....Pages 21-26
Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods....Pages 27-32
Adaptive Mesh Refinement for 2-D Numerical Analysis of Semiconductor Devices....Pages 33-36
Adaptive Grids for Semiconductor Modelling....Pages 37-41
A Numerical Large Signal Model for the Heterojunction Bipolar Transistor....Pages 43-46
The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot....Pages 47-50
A New Technique for Including Overshoot Phenomena in Conventional Drift-Diffusion Simulators....Pages 51-54
A Self-Consistent Calculation of Spatial Spreading of the Quantum Well in HEMT....Pages 55-58
A New Nonparabolic Hydrodynamic Model with Quantum Corrections....Pages 59-62
The Conditions of Device Simulation using Full Hydrodynamic Equations....Pages 63-66
Front Matter....Pages 67-67
Device Simulation Augmented by the Monte Carlo Method....Pages 69-74
Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors....Pages 75-80
Dynamics of Photoexcited Carriers in GaAs....Pages 81-86
The DAMOCLES Monte Carlo Device Simulation Program....Pages 87-92
Iterative Spectral Solution of Boltzmann’s Equation for Semiconductor Devices....Pages 93-95
Computer Experiments for High Electron Mobility Transistors and Avalanching Devices....Pages 97-105
Minority Electron Transport Across Submicron Layers of GaAs and InP....Pages 107-110
Photoconductive Switch Simulation with Absorbing Boundary Conditions....Pages 111-114
Front Matter....Pages 67-67
Simulation of Sub-Micron GaAs MESFETs for Microwave Control....Pages 115-118
Eigenvalue Solution to Steady-State Boltzmann Equation....Pages 119-122
Variable Threshold Heterostructure FET Studied by Monte Carlo Simulation....Pages 123-126
A Study of the Relaxation-Time Model based on the Monte Carlo Simulation....Pages 127-130
Field Assisted Impact Ionization in Semiconductors....Pages 131-136
Parallelization of Monte Carlo Algorithms in Semiconductor Device Physics on Hypercube Multiprocessors....Pages 137-140
Comparative Numerical Simulations of a GaAs Submicron FET using The Moments of the Boltzmann Transport and Monte Carlo Methods....Pages 141-144
J-V Characteristics of Graded Al x Ga 1-x As Heterojunction Barriers Using the Self Consistent Ensemble Monte Carlo Method....Pages 145-148
Monte Carlo Simulation of Lateral Surface Superlattices in a Magnetic Field....Pages 149-152
Quantum-Well Infrared Photodetectors: Monte Carlo Simulations of Transport....Pages 153-156
Simulation of non-stationary electron transport using scattering matrices....Pages 157-160
Rigid Pseudo-Ion Calculation of the Intervalley Electron-Phonon Interaction in Silicon....Pages 161-164
Numerical Study of High Field Transport in SiO 2 with Traps: A Coupled Monte Carlo and Rate Equation Model....Pages 165-168
Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators....Pages 169-172
Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices....Pages 173-176
Monte Carlo Simulation of Low-Dimensional Nanostructures....Pages 177-180
Front Matter....Pages 181-181
Many-Body Effects and Density Functional Formalism in Nanoelectronics....Pages 183-188
Modeling InAs/GaSb/AlSb interband tunnel structures....Pages 189-194
Quantum Kinetic Theory of Tunneling Devices....Pages 195-200
Transport in Electron Waveguides: Filtering and Bend Resistances....Pages 201-206
Front Matter....Pages 181-181
Numerical Methods for the Simulation of Quantum Devices Using the Wigner Function Approach....Pages 207-213
Density Matrix Coordinate Representation Numerical Studies of Quantum Well and Barrier Devices....Pages 215-218
A Distribution-Function Approach in the Many-Body Quantum Transport Theory of Quantum-Based Devices....Pages 219-222
The Generalized Scattering Matrix Approach: An Efficient Technique for Modeling Quantum Transport in Relatively Large and Heavily Doped Structures....Pages 223-226
Quantum Ray Tracing: A New Approach to Quantum Transport in Mesoscopic Systems....Pages 227-230
On Transport in Heterostructures within the Independent-Particle Picture....Pages 231-234
Transient Response in Mesoscopic Devices....Pages 235-238
The Inclusion of Scattering in the Simulation of Quantum Well Devices....Pages 239-242
Numerical Study of Electronic States in a Quantum Wire at Crossing Heterointerfaces....Pages 243-246
Dissipative Quantum Transport in Electron Waveguides....Pages 247-250
Exchange Energy Interactions in Quantum Well Heterostructures....Pages 251-254
Asymptotic Structure of the Density-Gradient Theory of Quantum Transport....Pages 255-258
Calculation of Transport Through Ballistic Quantum Structures....Pages 259-262
Numerical Study of the Higher Order Moments of Conductance Fluctuations in Mesoscopic Structures....Pages 263-266
Back Matter....Pages 267-268
