C,H,N and O in Si and Characterization and Simulation of Materials and Processes

Content: 
EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, Page ii
Front Matter, Page iii
Copyright, Page iv
Preface, Page ix, Alessandro Borghesi, Ulrich Gösele, Jan Vanhellemont
Organizers and sponsors, Page x
Foreword, Page v, D. Esteve
Organizers and sponsors, Page vi
Light impurities and their interactions in silicon, Pages 1-12, R.C. Newman
Activation energies for the formation of oxygen clusters related to the thermal donors in silicon, Pages 13-15, T. Hallberg, J.L. Lindström
Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZ-Si crystals, Pages 16-21, Kieran Marsden, Tadashi Kanda, Masahiko Okui, Masataka Hourai, Tatsuhiko Shigematsu
Simulation of oxygen precipitation in CZ-Si crystal during the pulling process, Pages 22-25, K. Nakamura, T. Saishuoji, T. Kubota, T. Tanimura
Etherogeneous precipitation in oxygen-implanted silicon, Pages 26-29, G.F. Cerofolini, S. Bertoni, L. Meda, C. Spaggiari
Stress-induced oxygen precipitation in Cz-Si, Pages 30-32, A. Misiuk, B. Surma, J. Hartwig
Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals, Pages 33-41, W.v. Ammon, P. Dreier, W. Hensel, U. Lambert, L. Köster
Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon, Pages 42-45, Atsushi Ikari, Hitoshi Sasaki, Eiji Tokizaki, Kazutaka Terashima, Shigeyuki Kimura
Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensor, Pages 46-49, A. Seidl, R. Marten, G. Müller
Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers, Pages 50-54, D. Gräf, U. Lambert, M. Brohl, A. Ehlert, R. Wahlich, P. Wagner
Non-doping light impurities in silicon for solar cells, Pages 55-62, B. Pivac, A. Sassella, A. Borghesi
Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells, Pages 63-67, K. Mahfoud, M. Loghmarti, J.C. Muller, P. Siffert
Effect of nitrogen contamination by crucible encapsulation on polycrystalline silicon material quality, Pages 68-72, S. Binetti, M. Acciarri, C. Savigni, A. Brianza, S. Pizzini, A. Musinu
Optical absorption coefficient of polycrystalline silicon with very high oxygen content, Pages 73-76, J.M. Serra, R. Gamboa, A.M. Vallêra
New oxygen-related EPR spectra in proton-irradiated silicon, Pages 77-80, Kh.A. Abdullin, B.N. Mukashev, A.M. Makhov, Yu.V. Gorelkinskii
Defect levels in n-silicon after high energy and high dose implantation of proton, Pages 81-84, J.F. Barbot, C. Blanchard, E. Ntsoenzok, J. Vernois
Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods, Pages 85-90, A. Bazzali, G. Borionetti, R. Orizio, D. Gambaro, R. Falster
The nitrogen-pair oxygen defect in silicon, Pages 91-95, F. Berg Rasmussen, S. öberg, R. Jones, C. Ewels, J. Goss, J. Miro, P. Deák
Study of post-deposition contamination in low-temperature deposited polysilicon films, Pages 96-99, J. Bertomeu, J. Puigdollers, D. Peiró, J. Cifre, J.C. Delgado, J. Andreu
Photoluminescence characterization of SF6-O2 plasma etching of silicon, Pages 100-103, I.A. Buyanova, A. Henry, B. Monemar, J.L. Lindström, G.S. Oehrlein
Anomalous oxygen diffusivity and the early stages of silicon oxidation, Pages 104-107, G.F. Cerofolini, G. La Bruna, L. Meda
Bandgap widening in quantum sieves, Pages 108-111, G.F. Cerofolini, L. Meda, D. Bisero, F. Corni, G. Ottaviani, R. Tonini
Fermi level dependent properties of hydrogen in crystalline silicon, Pages 112-115, W. Csaszar, A.L. Endrös
The complexing of oxygen with the Group II impurities Be, Cd and Zn in silicon, Pages 116-119, S.E. Daly, E. McGlynn, M.O. Henry, J.D. Campion, K.G. McGuigan, M.C. do Carmo, M.H. Nazaré
Effect of native point defects on morphology of gettering centres in CZ-silicon wafers, Pages 120-124, K.L. Enisherlova, T.F. Rusak, M.G. Mil\'vidskii, V.J. Reznick
Effects of annealing in oxygen and nitrogen atmosphere on F.Z. silicon wafers, Pages 125-128, N. Gay, F. Floret, S. Martinuzzi, L. Roux, J. Arnould, G. Mathieu
Characterization of SOI-SIMOX structures using Brillouin light scattering, Pages 129-132, G. Ghislotti, A. Gagliardi, C.E. Bottani, S. Bertoni, G.F. Cerofolini, L. Meda
EPR of interstitial hydrogen in silicon: Uniaxial stress experiments, Pages 133-137, Yu.V. Gorelkinskii, N.N. Nevinnyi
Magnetic resonance spectroscopy of hydrogen-passivated double donors in silicon, Pages 138-141, I.S. Zevenbergen, Yu.V. Martynov, F. Berg Rasmussen, T. Gregorkiewicz, C.A.J. Ammerlaan
Evaluation of the quality of HMCZ Si single crystals with a diameter of 200 mm, Pages 142-145, E. lino, K. Takano, M. Kimura, H. Yamagishi
Cavities owing to hydrogen in Si single crystals grown by continuously charging CZ method, Pages 146-149, E. Iino, K. Takano, M. Kimura, H. Yamagishi
Thermal donor formation in aluminum doped silicon, Pages 150-153, J.L. Lindström, T. Hallberg
Comparison of N- and P-type silicon irradiated by MeV protons and post-annealed at different temperatures, Pages 154-157, E. Ntsoenzok, P. Desgardin, J.F. Barbot, J. Vernois, D.B. Isabelle
Silicon interstitials generation during the exposure of silicon to hydrogen plasma, Pages 158-161, R. Tonini, A. Monelli, F. Corni, S. Frabboni, G. Ottaviani, G. Queirolo
Influence of thermal history during Czochralski silicon crystal growth on OISF nuclei formation, Pages 162-166, M. Porrini, P. Rossetto
Optical investigation of Si1−y Cy alloys (0 ≤ y ≤ 0.015), Pages 167-170, K. Pressel, B. Dietrich, H. Rücker, M. Methfessel, H.J. Osten
The role of rapidly diffusing dimers in oxygen loss and the association of thermal donors with small oxygen clusters, Pages 171-174, S.A. McQuaid, R.C. Newman, E. Muñoz
Oxygen redistribution during diffusion in thin silicon layers, Pages 175-178, J.M. Serra, A.M. Vallêra
Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes, Pages 179-182, E. Simoen, J.P. Dubuc, J. Vanhellemont, C. Claeys
Influence of oxygen on the recombination strength of dislocations in silicon wafers, Pages 183-186, J.J. Simon, I. Périchaud
Oxygen content of substrates and tunnel oxide quality: an in-line systematic analysis, Pages 187-191, E. Sottocasa, F. Illuzzi, D. Nahmad, M.L. Polignano
Hydrogen passivation of gold centers in silicon, Pages 192-195, Einar ö. Sveinbjörnsson, Olof Engström
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon, Pages 196-199, M.-A. Trauwaert, J. Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, A. Stesmans, P. Clauws
Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy, Pages 200-203, Caroline Veve, Michael Stemmer, Santo Martinuzzi
Carbon in β-rhombohedral boron, Pages 204-208, Helmut Werheit, Udo Kuhlmann, Torsten Lundström
The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals, Pages 209-212, E. Wolf, W. Schröder, H. Riemann, B. Lux
Oxygen related defects in germanium, Pages 213-220, P. Clauws
Surface mode excitation in platelet SiOx precipitates in silicon, Pages 221-224, A. Sassella, B. Pivac, T. Abe, A. Borghesi
Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography, Pages 225-229, G. Kissinger, J. Vanhellemont, E. Simoen, C. Claeys, H. Richter
Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers, Pages 230-236, F.G. Kirscht, Y. Furukawa, W. Seifert, K. Schmalz, A. Buczkowski, S.B. Kim, H. Abe, H. Koya, J. Bailey
A thermodynamic model for the growth of buried oxide layers by thermal oxidation, Pages 237-240, E. Schroer, S. Hopfe, J.-Y. Huh, U. Gösele
Uniaxial stress studies on the dominant nitrogen defect in silicon and germanium, Pages 241-245, F. Berg Rasmussen, B. Bech Nielsen
The fracture strength of nitrogen doped silicon wafers, Pages 246-250, Jan Vedde, Peter Gravesen
Luminescence centres containing two, three and four hydrogen atoms in radiation-damaged silicon, Pages 251-254, A.N. Safonov, E.C. Lightowlers
Thermal anneal activation of defects in hydrogen plasma-treated silicon, Pages 255-258, C.W. Nam, A. Tanabe, S. Ashok
Si-H stretch modes of hydrogen–vacancy defects in silicon, Pages 259-263, B. Bech Nielsen, L. Hoffmann, M. Budde
Bonding and diffusion in hydrogenated amorphous silicon by tight-binding molecular dynamics, Pages 264-267, Stefano Lanzavecchia, Luciano Colombo
Supersaturated carbon in silicon and silicon/germanium alloys, Pages 268-274, H.J. Osten
The effect of carbon on diffusion in silicon, Pages 275-281, P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, J.M. Poate
Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon, Pages 282-285, A. Romano-Rodriguez, C. Serre, L. Calvo-Barrio, A. Pérez-Rodriguez, J.R. Morante, R. Kögler, W. Skorupa
Structural particularities of carbon-incorporated Si–Ge heterostructures, Pages 286-290, C. Guedj, D. Bouchier, P. Boucaud, G. Hincelin, X. Portier, A. L\'Hoir, S. Bodnar, J.-L. Regolini
Formation of epitaxial β-SiC layers by fullerene-carbonization of silicon(001): a comparison between the use of C60 and C70 molecules, Pages 291-294, S. Henke, M. Philipp, B. Rauschenbach, B. Stritzker
Simulations of thin film deposition from atomic and cluster beams, Pages 1-7, G.H. Gilmer, C. Roland, D. Stock, M. Jaraiz, T. Diaz de la Rubia
Optical investigation of some statistic and kinetic aspects of the nucleation and growth of InAs islands on GaAs, Pages 8-16, J.M. Gérard, O. Cabrol, J.Y. Marzin, N. Lebouché, J.M. Moison
Monte Carlo simulation of the growth of semiconductor quantum wires, Pages 17-24, Vladimir Mitin, Saulius Keršulis
Surface morphology due to enhanced migration in heteroepitaxial growth of compound semiconductors, Pages 25-29, M. Djafari Rouhani, A.M. Gué, R. Malek, G. Bouyssou, D. Estève
Semi-insulating properties control by CVD process modelling, Pages 30-34, C. Cordier, E. Dehan, E. Scheid, P. Duverneuil
Monte Carlo simulation of cuprate oxides, Pages 35-37, S. Nicoletti, G. Mattei
Interfacial effects during ion beam processing of metals, Pages 38-48, R.S. Averback, Mai Ghaly, P. Bellon
Microscopic theory of colloid formation in solids under irradiation, Pages 49-51, E.A. Kotomin, V.N. Kuzovkov
Stoichiometric disturbances in multi-atomic multilayered structures due to ion implantation through mask openings, Pages 52-55, M.M. Faye, A. Altibelli, C. Bonafos, A. Claverie
Crack propagation and fracture in ceramic films—million atom molecular dynamics simulations on parallel computers, Pages 56-71, Priya Vashishta, Aiichiro Nakano, Rajiv K. Kalia, Ingvar Ebbsjö
Computational materials design and processing: perspectives for atomistic approaches, Pages 72-82, E. Wimmer
Cross-sectional atomic force imaging of semiconductor heterostructures, Pages 83-88, B. Dwir, F. Reinhardt, G. Biasiol, E. Kapon
Theoretical reflectance anisotropy spectroscopy and scanning tunnelling microscopy study of the GaAs(001) (2 × 4) surface, Pages 89-92, J.M. Bass, S.J. Morris, C.C. Matthai
Conductance simulation through single atom junctions at the scanning tunnelling microscope, Pages 93-95, L. Jurczyszyn, N. Mingo, F. Flores
Study of misfit-dislocation formation in strained-layer heteroepitaxy using ultrahigh vacuum scanning tunneling microscopy, Pages 96-100, G. Springholz, G. Bauer
HREM simulations of particles and interfaces refined by molecular dynamics relaxations, Pages 101-107, Dirk Timpel, Kurt Scheerschmidt, Sergej Ruvimov
Calculated high resolution electron microscopy images of nano-sized structures obtained by molecular dynamics, Pages 108-111, G. Mattei
Characterization and simulation of organic adsorbates on the Si(100)(2 × 1)-surface using photoelectron spectroscopy and quantum mechanical calculations, Pages 112-115, Th. Kugler, Ch. Ziegler, W. Göpel
In situ spectroscopic ellipsometry: present status and future needs for thin film characterisation and process control, Pages 116-120, Pierre Boher, Jean Louis Stehle
Grain boundary sliding: an ab initio simulation, Pages 121-126, C. Molteni, G.P. Francis, M.C. Payne, V. Heine
The tight-binding Ising model for surface segregation in binary alloys: formalism and applications, Pages 127-130, S. Ouannasser, H. Dreyssé, L.T. Wille
Binding and diffusion of an Al adatom on the hydrogen-terminated Si(100) surface, Pages 131-134, Yoshiaki Tanida, Minoru Ikeda
Diffusion constant of Ga, In and As adatoms on GaAs (001) surface: molecular dynamics calculations, Pages 135-138, A. Palma, E. Semprini, A. Talamo, N. Tomassini
Hydrogen, oxygen and chlorine adsorption on Ag(110) surface: a cluster calculation, Pages 139-141, J.L.A. Alves, H.W. Leite Alves, C.M.C. de Castilho
New trends in atomic scale simulation of wet chemical etching of silicon with KOH, Pages 142-145, H. Camon, Z. Moktadir, M. Djafari-Rouhani
From atomic parameters to anisotropic etching diagrams, Pages 146-149, N. Moldovan, Mihaela Ilie
Tight-binding and local density approximation studies of semiconductor surfaces and small organic adsorbates, Pages 150-154, C.M. Goringe, A.P. Sutton
Coupled atom and electron motions on the Si(001) surface from first-principles molecular dynamics and their visualization by a video, Pages 155-157, E.P. Stoll, A. Baratoff, A. Mangili, D. Maric
Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure, Pages 158-161, A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt
Evolution of the morphology of annealed, bulk MgO (100) substrate surfaces, Pages 162-167, Simon L. King, Mark R. Wilby, Ian W. Boyd
Structure models of the “C-type” defect on Si(001), Pages 168-171, Takehide Miyazaki, Tsuyoshi Uda, Kiyoyuki Terakura
Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes, Pages 172-176, Kyung-Soo Suh, Jong-Lam Lee, Hyung-Ho Park, Chan-Ho Kim, Jae-jin Lee, Kee-Soo Nam
The [001] antiphase boundaries at the order–disorder transition of Cu3Au, Pages 177-180, H.M. Polatoglou
Large-scale molecular dynamics simulations of fracture growth in alloys, Pages 181-184, W.C. Morrey, L.T. Wille
Dynamics of partial dislocations in silicon, Pages 185-188, L.B. Hansen, K. Stokbro, B.I. Lundqvist, K.W. Jacobsen
Elastic constants in defected and amorphous silicon by tight-binding molecular dynamics, Pages 189-192, Guido De Sandre, Luciano Colombo, Carlo Bottani
Transformation toughening in NiAl observed via Monte-Carlo simulations, Pages 193-196, R. Guénin, P.C. Clapp, Y. Zhao, J.A. Rifkin
Sol-gel polymerization in alkoxysilanes: 29Si NMR study and simulation of chemical kinetics, Pages 197-200, A. Vainrub, F. Devreux, J.P. Boilot, F. Chaput, M. Sarkar
Molecular dynamics study for diffusion process in amorphous and supercooled liquid Zr67Ni33 alloys, Pages 201-204, Tomoyasu Aihara Jr., Yoshiyuki Kawazoe, Tsuyoshi Masumoto
Theory of enhanced diffusion in predoped and implanted silicon, Pages 205-207, E. Antoncik
Post-growth diffusion of Be doped InGaAs epitaxial layers: experimental and simulated distributions, Pages 208-211, S. Koumetz, J. Marcon, K. Ketata, M. Ketata, F. Lefebvre, P. Martin, P. Launay
Quantum chemical simulations of the optical properties and diffusion of electron centres in MgO crystals, Pages 212-214, E.A. Kotomin, M.M. Kuklja, R.I. Eglitis, A.I. Popov
Effects of doping on the electronic properties of semiconducting iron disilicide, Pages 215-218, Y. Tomm, L. Ivaneko, K. Irmscher, St. Brehme, W. Henrion, I. Sieber, H. Lange
A computationally efficient differentiable Tight-Binding energy functional, Pages 219-223, A.P. Horsfield
Heterocrystaline SiC: ab inito calculations for superlattices of combinations of cubic and hexagonal SiC, Pages 224-227, Peter Käekell, Friedhelm Bechstedt
A parallel implementation of tight-binding molecular dynamics, Pages 228-231, Luciano Colombo, William Sawyer
Molecular dynamics simulation of a nuclear waste glass matrix, Pages 232-236, J.M. Délaye, D. Ghaleb
Ordering tendencies in Fe–Al alloys in magnetic and non-magnetic models, Pages 237-241, S.K. Bose, J. Kudrnovský, V. Drchal, O. Jepsen, O.K. Andersen
Magnetism of an Ru adlayer on graphite, Pages 242-246, P. Krüger, C. Demangeat, J.C. Parlebas, A. Mokrani
Theoretical studies of implanted muons in organic magnets, Pages 247-250, R.M. Valladares, M.I.J. Probert, A.J. Fisher
Author Index of Volume 36, Pages 295-296
Subject Index of Volume 36, Pages 297-301
Author Index of Volume 37, Pages 251-252
Subject Index of Volume 37, Pages 253-256