Advances in the Understanding of Crystal Growth Mechanisms

Content: 
Front Matter, Page iii
Copyright, Page iv
PREFACE, Page v, Tatau Nishinaga
Thermodynamic vs. kinetic critical nucleus and the reversible work of nucleus formation, Pages 3-17, K. Nishioka
The terrace-step-kink approach and the capillary-wave approach to fluctuation properties of vicinal surfaces, Pages 19-30, T. Yamamoto, N. Akutsu, Y. Akutsu
Fluctuation and morphological instability of steps in a surface diffusion field, Pages 31-45, M. Uwaha
Pattern formation of a crystal growing in a diffusion field, Pages 47-60, Y Saito
Step structures of Si(111) vicinal surfaces, Pages 61-74, A. Natori
Step growth mechanism on (001) surfaces of diamond structure crystals, Pages 75-87, M. Tsuda, M. Hata
Monte Carlo simulation of MBE growth, Pages 89-100, T. Irisawa, Y. Arima
Crystal growth kinetics on stepped surface by the path probability method, Pages 101-113, K. Wada, H. Ohmi
Inter-surface diffusion of cation incorporation in MBE of GaAs and InAs, Pages 117-130, T. Nishinaga, X.Q. Shen
Study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods, Pages 131-147, A. Koukitu
Surface Kinetics and Mechanism of Atomic Layer Epitaxy of GaAs Using Trimethylgallium, Pages 149-161, H. Ohno
Atomic ordering in epitaxial alloy semiconductors: from the discoveries to the physical understanding, Pages 163-183, H. Nakayama, T. Kita, T. Nishino
Monte Carlo simulation of microstructures in ordered III-V semiconductor alloys, Pages 185-201, N. Kuwano, K. Oki
Control of rotational twins on heterointerface of fluoride and semiconductors, Pages 203-212, K. Tsutsui, S. Ohmi, K. Kawasaki, N.S. Sokolov
Growth of Ag crystallites on Mo(110) substrate observed by “in-situ” SEM, Pages 213-222, Y. Gotoh, A. Horii, H. Kawanowa, M. Kamei, H. Yumoto, T. Gonda
Induction time of electrical nucleation in supercooled sodium acetate trihydrate aqueous solution, Pages 223-233, Y. Iba, T. Ohachi
Growth mechanism of smoke particles, Pages 235-244, C. Kaito, S. Kimura, Y. Saito
Thermally oxidized layers on Si-wafers –Surface X-ray scattering and field ion microscopy–, Pages 247-266, J. Harada, I. Takahashi, T. Shimura, M. Umeno
Atom exchange process at the growth front in OMVPE revealed by X-ray CTR scattering measurement, Pages 267-277, Y. Takeda, M. Tabuchi
Surface structures during silicon growth on an Si(111) surface, Pages 279-291, A. Ichimiya, H. Nakahara, Y. Tanaka
REM studies of surfactant-mediated epitaxy, Pages 293-307, H. Minoda, K. Yagi
Oscillations of the intensity of scattered energetic ions from growing surface, Pages 309-321, K. Nakajima, Y. Fujii, K. Narumi, K. Kimura, M. Mannami
Scanning tunneling microscopy study of solid phase epitaxy processes on the Si(001)-2×1 surface, Pages 323-336, T. Yao, T. Komura, K. Uesugi, M. Yoshimura
Crystal Growth of Polymers in Thin Films, Pages 337-348, K. Izumi, Gan Ping, M. Hashimoto, A. Toda, H. Miyaji, Y. Miyamoto, Y. Nakagawa
Crystal growth and control of molecular orientation and polymorphism in physical vapor deposition of long-chain compounds, Pages 349-363, K. Sato, H. Takiguchi, S. Ueno, J. Yano, K. Yase
Polymer crystallization approached from a new view point of chain sliding diffusion, Pages 365-378, M. Hikosaka
Initial growth layer, island formation, and critical thickness of InAs heteroepitaxy on GaAs substrate, Pages 381-397, A. Sasaki
Effects of buffer layers in heteroepitaxy of gallium nitride, Pages 399-413, K. Hiramatsu, T. Detchprohm, H. Amano, I. Akasaki
Growth processes in the heteroepitaxy of Ge and Si1−xGex on Si substrates using gas-source molecular beam epitaxy, Pages 415-427, Y. Yasuda, H. Ikeda, S. Zaima
Crystal growth mechanisms in III-V/Si heteroepitaxy, Pages 429-445, T. Soga, M. Umeno
Atomic layer epitaxy of GaAs, AlAs and GaN using GaCl3 and AlCl3, Pages 447-457, F. Hasegawa
Surface diffusion processes of Ga and Al in MBE - formation of 10-nm scale GaAs ridge structures -, Pages 459-471, T. Noda, S. Koshiba, Y. Nakamura, Y. Nagamune, H. Sakaki
Heteroepitaxy of cadmium telluride on sapphire, Pages 473-484, M. Kasuga, D. Kodama, H. Hagiwara, K. Kagami, K. Yano, A. Shimizu
Formation of strain-free heteroepitaxial structures by annealing under ultrahigh pressure, Pages 485-497, H. Ishiwara, T. Hoshino
Growth mechanism of oxide superconductor crystals, Pages 501-513, H. Takei
An atomic level analysis of crystal growth mechanism in complex systems by means of nano-optical microscopy and AFM., Pages 515-529, H. Komatsu, S. Miyashita, T. Nakada, G. Sazaki, A.A. Chernov
A comprehensive treatise on crystal growth from aqueous solutions, Pages 531-546, T. Ogawa
Crystallization of sol-gel derived ferroelectric thin films with preferred orientation, Pages 547-558, S. Hirano, T. Yogo, W. Sakamoto
Anisotropy in microscopic structures of ice-water and ice-vapor interfaces and its relation to growth kinetics, Pages 559-573, Y. Furukawa, H. Nada
Growth of InGaSbBi Bulk Crystals on InSb Seeds and Rapid Permeation of Ga into InSb during Growth, Pages 575-591, M. Kumagawa, Y. Hayakawa
Subject Index, Pages 593-600