Advanced Technologies for Next Generation Integrated Circuits (Materials, Circuits and Devices)

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Contents
1 Graphene and other than graphene materials technology and beyond
	1.1 Introduction—graphene and graphene nanoribbon
	1.2 Synthesis of graphene
		1.2.1 Growth of multilayer graphene film on copper
	1.3 Electronic structure of graphene
	1.4 Bandgap engineering of graphene
		1.4.1 Energy bandgaps of GNR
	1.5 GNR-based transistors, circuits, and interconnects
	1.6 Doping of graphene
	1.7 Other than graphene materials and beyond
	1.8 Conclusion
	References
2 Emerging graphene-compatible biomaterials
	2.1 Introduction
		2.1.1 Carbon nanomaterials
	2.2 Graphene synthesis and properties
	2.3 Functionalization of graphene
	2.4 Graphene-based nanocomposites
	2.5 Advances in diagnostic sensors
		2.5.1 Graphene-based field-effect transistors
		2.5.2 Gas and chemical sensors
		2.5.3 Magnetic and electromagnetic sensors
		2.5.4 pH and temperature sensors
	2.6 Advances in fabrication techniques
	2.7 Advances in monitoring and therapy
		2.7.1 Microfluidics
		2.7.2 Wireless, portable and wearable electronics
	2.8 Bio-microelectromechanical systems (MEMS) and bio-nanoelectromechanical systems (NEMS)
	2.9 Advanced power sources and control systems
	2.10 Bioelectronics safety
	References
3 Single electron devices: concept to realization
	3.1 Introduction
		3.1.1 Importance of single electron devices
		3.1.2 Theory of single electron devices
		3.1.3 Single electron transistor: principle of operation
		3.1.4 Advantages, challenges, and applications
	3.2 Experimental research
		3.2.1 First experimental observation of single electron effects
		3.2.2 Single molecular single electron transistor
		3.2.3 Single atom single electron transistor
	3.3 Computational research
		3.3.1 SET as switching element
		3.3.2 SET as sensor
	References
4 Application of density functional theory (DFT) for emerging materials and interconnects
	4.1 Introduction
	4.2 Density functional theory
	4.3 Theory behind DFT
	4.4 Implementation of DFT
	4.5 Hybrid material modelling with DFT
	4.6 Conclusion
	References
5 Memristor devices and memristor-based circuits
	5.1 Introduction
		5.1.1 Brief history of memristor
		5.1.2 What is a memristor?
		5.1.3 Applications of memristors
	5.2 Types of memristors
		5.2.1 Thin-film memristors
		5.2.2 Spintronic memristors
	5.3 Device structure and working of a memristor
		5.3.1 Fabrication and device structure
	5.4 Memristor device modeling
		5.4.1 Mathematical modeling of the memristor
		5.4.2 Memristor device model using Simscape®
		5.4.3 SPICE memristor device model
		5.4.4 Memristor device model using Verilog-A(MS)
		5.4.5 Memristor emulators
	5.5 Characteristics of the memristor
	5.6 Memristors in analog nanoelectronics
		5.6.1 Memristance controlled oscillator
		5.6.2 LC-tank oscillator
		5.6.3 Programmable Schmitt trigger oscillator
		5.6.4 Neuromorphic chips
	5.7 Memristors in digital nanoelectronics
		5.7.1 Memristor-based logic gate design
		5.7.2 Memristor-based full adder
		5.7.3 Physical unclonable function
		5.7.4 Memristor architectures for FPGAs
		5.7.5 Memristor crossbar
	5.8 Summary and future directions of research
	Acknowledgments
	References
6 Organic–inorganic heterojunctions for optoelectronic applications
	6.1 Introduction
	6.2 Experimental background
		6.2.1 Mechanisms of conductivity enhancement
		6.2.2 Atomic force microscopy
			6.2.2.1 Kelvin probe force microscopy
			6.2.2.2 Conductive atomic force microscopy
		6.2.3 Sample preparation
	6.3 Results and discussion
		6.3.1 Thickness and morphology
		6.3.2 Surface potential and work function
		6.3.3 Conductivity
		6.3.4 Raman spectra
		6.3.5 Electrical characteristics of PEDOT: PSS/n-Si heterojunction diodes
		6.3.6 Photovoltaic characteristics of PEDOT: PSS/n-Si solar cell
		6.3.7 Energy band diagram
	6.4 Summary
	Acknowledgments
	References
7 Emerging high-k dielectrics for nanometer CMOS technologies and memory devices
	7.1 Introduction
	7.2 Historical perspective and current status
	7.3 Characterization of Ge/high-k devices with dry and wet interface treatment
	7.4 Interface improvement and reliability of ZrO2/Al2O3/Ge gate stack
	7.5 Enhancement of dielectric constant with HfZrO
	7.6 Dielectric stacks for next-generation memory devices
	7.7 Summary
	References
8 Technology and modeling of DNTT organic thin-film transistors
	8.1 Introduction
	8.2 Motivation
		8.2.1 Potential applications of flexible organic electronics
	8.3 Organic thin-film transistors (OTFTs)
		8.3.1 Working principle of OTFT
		8.3.2 OTFT parameter
	8.4 Modeling and simulation of DNTT-based OTFT
		8.4.1 Configurations of DNTT-based OTFT
		8.4.2 Device physical modeling
			8.4.2.1 Density of states model
			8.4.2.2 Trapped carrier density
			8.4.2.3 Poole–Frenkel mobility model
		8.4.3 Simulation results of DNTT-based OTFT
	8.5 Applications of OTFT
		8.5.1 Organic light-emitting diodes (OLEDs)
		8.5.2 Radio frequency identification (RFID) tags
		8.5.3 DNA sensors
	8.6 Conclusion
	Acknowledgments
	References
9 Doping-free tunnelling transistors – technology and modelling
	9.1 Introduction
		9.1.1 Scaling of threshold voltage
		9.1.2 Need of slow supply voltage (VDD) scaling
		9.1.3 Possible solution to the power consumption
	9.2 Tunnel field-effect transistor
		9.2.1 Operating principle of TFET
		9.2.2 The conventional TFET limitations
	9.3 DF dynamically configurable TFET
		9.3.1 Device structure and simulation parameter
		9.3.2 Proposed fabrication process flow
	9.4 Simulation results and discussion
		9.4.1 Carrier concentration and energy band diagram
		9.4.2 Transfer characteristics comparison of conventional and DF-TFET
		9.4.3 Output characteristics of conventional and DF-TFET
		9.4.4 Impact of supply voltage and PG bias scaling on DF-TFET
		9.4.5 Impact of control gate voltage on tunnelling rate and energy barrier width
		9.4.6 Impact of source spacer thickness
		9.4.7 Sensitivity towards control gate length scaling
		9.4.8 Sensitivity towards temperature
		9.4.9 Sensitivity towards oxide thickness
		9.4.10 Sensitivity towards silicon thickness
	9.5 Summary
	References
10 Tunnel junctions to tunnel field-effect transistors—technologies, current transport models, and integration
	10.1 Introduction—band-to-band tunneling graphene nanoribbon tunnel FETs
	10.2 Device structure and operation of GNR TFET
	10.3 Current transport model
		10.3.1 Semi-classical analytical model
		10.3.2 Semi-quantum analytical model
		10.3.3 NEGF-based numerical model: simulation method and approach
	10.4 Transfer characteristics of GNR TFET
	10.5 Subthreshold slope of GNR TFET
	10.6 Estimation of subthreshold swing point, I60
	10.7 Output characteristics of GNR TFET
	10.8 Width-dependent performance analysis of GNR TFET
	10.9 Voltage transfer characteristics of GNR TFET complementary inverter
	10.10 Conclusion
	References
11 Low-dimension materials-based interlayer tunnel field-effect transistors: technologies, current transport models, and integration
	11.1 Introduction
	11.2 Device structure and operation
	11.3 Current transport model
		11.3.1 Estimation of tunneling probability
		11.3.2 Estimation of charge density
		11.3.3 Estimation of drain current
	11.4 Performance analysis of interlayer tunneling-based graphene JTET
	11.5 Voltage transfer characteristics of graphene JTET inverter
	11.6 Conclusion
	References
12 Molybdenum disulfide–boron nitride junctionless tunnel effect transistor
	12.1 Introduction
	12.2 Device structure and operation
	12.3 Estimation of drain current
	12.4 Results and discussion
	12.5 Conclusion
	References
Index
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